Surface Enhanced Raman Scattering Substrate and Its Preparation Process
A surface-enhanced Raman and substrate technology, applied in Raman scattering, nanotechnology for materials and surface science, nanostructure manufacturing, etc., can solve difficult problems and achieve simple preparation process, high stability and sensitivity , low cost effect
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Embodiment 1
[0029] refer to figure 1 , the surface-enhanced Raman scattering substrate provided in this embodiment includes a substrate 1, the surface of the substrate 1 has a microstructure array 2, and the microstructure array 2 is formed by a plurality of microstructures 21 arranged in an array. The surface-enhanced Raman scattering substrate also includes metal nanoparticles 3 covering the surface of the microstructure array 2 . Wherein, the surface-enhanced Raman scattering substrate in this embodiment is three-dimensional.
[0030] Specifically, the shape of the microstructure 21 is a nano flower shape. The material of the substrate 1 is a nitride semiconductor, wherein the nitride semiconductor is selected from one of AlN, GaN, InN or AlGaInN. Of course, the material of the substrate 1 can also be selected from other nitrides, which is not limited here. The microstructure array 2 is obtained by etching the substrate 1 , therefore, the material of the microstructure array 2 is th...
Embodiment 2
[0045] The structure of the surface-enhanced Raman scattering substrate in this embodiment is the same as that of the surface-enhanced Raman scattering substrate in Example 1. The preparation method in this embodiment includes:
[0046] Step S1 , providing a substrate 1 .
[0047] Step S2, etching the substrate 1 to form a microstructure array 2 on its surface.
[0048] refer to Figure 7 , in step S2, the substrate 1 is etched by a photoelectrochemical etching process. Specifically, step S2 includes:
[0049]S21, substrate 1, and platinum wire are used as anode and cathode respectively, a 300W xenon lamp is used as a light source, and the etching solution is an aqueous solution of disodium edetate (EDTA-2Na), wherein the concentration of disodium edetate is 0.3 mol / L, the etching voltage is 5V, and the etching time is 20min;
[0050] S22, rinse the substrate 1 obtained in step S21 with deionized water and use N 2 Blow dry to form a microstructure array 2 on the surface of...
Embodiment 3
[0057] The structure of the surface-enhanced Raman scattering substrate in this embodiment is the same as that of the surface-enhanced Raman scattering substrate in Example 1. The preparation method in this embodiment includes:
[0058] Step S1 , providing a substrate 1 .
[0059] Step S2, etching the substrate 1 to form a microstructure array 2 on its surface.
[0060] In step S2, the substrate 1 is etched using a photoelectrochemical etching process. Specifically, step S2 includes:
[0061] S21, substrate 1, and platinum wire are used as anode and cathode respectively, 300W xenon lamp is used as light source, etching solution is ionic liquid 1-ethyl-3-methylimidazolium trifluoromethanesulfonate ([Emim]OTF), etching The voltage is 5V, and the etching time is 10min;
[0062] S22, rinse the substrate 1 obtained in step S21 with deionized water and use N 2 Blow dry to form a microstructure array 2 on the surface of the substrate 1 .
[0063] Step S3 , depositing metal nanopa...
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