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A LED epitaxial growth method for enhancing luminous radiation efficiency

A technology of radiation efficiency and epitaxial growth, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low radiation efficiency in the quantum well light-emitting area, achieve the goal of suppressing electron leakage current, improving hole injection level, and enhancing radiation efficiency Effect

Active Publication Date: 2019-04-26
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the technical problem to be solved in this application is to provide an LED epitaxial growth method that enhances the luminous radiation efficiency, and solves the problems of electron leakage current and low radiation efficiency of the quantum well light-emitting area in the existing LED epitaxial growth.

Method used

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  • A LED epitaxial growth method for enhancing luminous radiation efficiency
  • A LED epitaxial growth method for enhancing luminous radiation efficiency
  • A LED epitaxial growth method for enhancing luminous radiation efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Such as figure 1 with figure 2 As shown, the LED epitaxial growth method for enhancing luminous radiation efficiency described in this embodiment includes the following steps:

[0055] Step 101, using metal chemical vapor deposition method MOCVD, in 1000°C-1100°C H 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0056] Step 102 , growing a low-temperature buffer layer GaN, and etching the low-temperature buffer layer GaN to form an irregular island shape.

[0057] Step 103 , growing an undoped GaN layer.

[0058] Step 104 , growing a Si-doped N-type GaN layer.

[0059] Step 105, growing AlGaN: Zn thin barrier layer: keep the reaction chamber pressure at 800mbar-950mbar, keep the temperature at 750°C-900°C, and feed NH with a flow rate of 50000sccm-55000sccm (sccm is milliliter per minute) 3 , 50sccm-70sccm TMGa, 90L / min-110L / min H 2 , 1200sccm-1400...

Embodiment 2

[0069] This embodiment specifically describes the specific content of growing the LED epitaxial layer as a whole, such as image 3 with Figure 4 As shown, the LED epitaxial growth method for enhancing luminous radiation efficiency described in this embodiment includes the following steps:

[0070]Step 201, processing the sapphire substrate: into the reaction chamber of the metal-organic chemical vapor deposition system with the substrate placed, H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0071] Step 202, growing low-temperature buffer layer GaN: lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed NH with a flow rate of 10000sccm-20000sccm 3 , 50sccm-100sccm TMGa and 100L / min-130L / min H 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate.

...

Embodiment 3

[0086] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0087] Such as Figure 5 with Image 6 As shown, the conventional LED epitaxial growth method includes the following steps:

[0088] Step 301, processing the sapphire substrate: Into the reaction chamber of the metal-organic chemical vapor deposition system with the substrate placed, H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0089] Step 302, grow low-temperature buffer layer GaN: lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed NH with a flow rate of 10000sccm-20000sccm 3 , 50sccm-100sccm TMGa and 100L / min-130L / min H 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate.

[0090] Raise the temperature to 1000°C-1100°C,...

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Abstract

The invention discloses an LED epitaxial growth method capable of enhancing luminous radiation efficiency. The method sequentially comprises the steps of processing a substrate, growing a low temperature buffer layer GaN, growing a non-doping GaN layer, growing a Si-doped N-type GaN layer, growing a AlGaN:Zn thin barrier layer, alternatively growing InxGa(1-x)N and GaN light emitting layers, growing a AlGaN:Mg thin barrier layer, growing a P type AlGaN layer, growing a Mg-doped P type GaN layer, and cooling. According to the method provided by the invention, the problems that in existing LED epitaxial growth, electron leak current exists and the light emitting area of the quantum well is low in radiation efficiency are solved.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial growth, in particular, to an LED epitaxial growth method for enhancing luminous radiation efficiency. Background technique [0002] As a lighting source, LED has the advantages of low energy consumption, long life, small size, high luminous efficiency, no pollution and rich colors compared with existing conventional lighting sources. At present, the scale of domestic production of LEDs is gradually expanding, and the market demand for LEDs and LED light effects are increasing day by day. [0003] Since the quantum efficiency of LEDs is still not high at present, the luminous efficiency of LEDs cannot be improved in a breakthrough, which has become the most concerned issue in the industry. [0004] At present, gallium nitride materials are mostly used in quantum wells in LEDs. Gallium nitride materials have a brazingite structure. Due to the self-polarization effect of the material...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/20
CPCH01L33/0075H01L33/06H01L33/20
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS