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LED epitaxial layer growth method

A growth method and epitaxial layer technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency and large warping of epitaxial wafers, so as to reduce warping, increase windows, improve LED luminous efficiency and The effect of antistatic ability

Active Publication Date: 2019-10-18
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the LED size is upgraded to 4 inches, LEDs generally have technical problems such as large warping of epitaxial wafers and low luminous efficiency.

Method used

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  • LED epitaxial layer growth method
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  • LED epitaxial layer growth method

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Embodiment 1

[0054] The application example of the LED epitaxial growth method of the present invention is provided below, and its epitaxial structure is shown in Fig. 1, figure 1 It is a schematic diagram of the structure of the LED epitaxial layer in the present invention, and the growth method can be found in figure 1 . This application uses VEECO MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 (NH 3 Purity 99.999%) as N source, metal-organic trimethylgallium (TMGa) and metal-organic triethylgallium (TEGa) as gallium source, trimethylindium (TMIn) as indium source, N-type dopant as Silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesocene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 100Torr and 1000Torr. The specific growth method is as follows:

[0055...

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Abstract

The invention discloses an LED epitaxial layer growth method. The method sequentially comprises the steps: processing a substrate, growing a low-temperature nucleating layer GaN, growing a high-temperature GaN buffer layer, and growing a non-doped u-GaN layer, growing an N2 and H2 mixed atmosphere low-temperature AlInGaN:Zn layer, growing an H2 atmosphere medium-temperature InGaN:Si layer, growingan N2 atmosphere high-temperature GaN:Mg layer, performing NH3 cracking, growing a light-emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer, growing a P-type GaN contact layer,and performing cooling. According to the method, the N2 and H2 mixed atmosphere low-temperature AlInGaN:Zn layer, the H2 atmosphere medium-temperature InGaN:Si layer and the N2 atmosphere high-temperature GaN:Mg layer and the NH3 cracking process are introduced to improve the electron hole pair of a quantum well light-emitting region, enhance the light-emitting radiation efficiency, improve the light-emitting efficiency of the LED, reduce the warping of the epitaxial wafer and improve the appearance of the epitaxial wafer.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, in particular, to a method for growing an LED epitaxial layer. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is also gradually expanding; The demand for LED brightness and luminous efficiency is increasing day by day in the market. Customers are concerned that LEDs are more power-saving, have higher brightness and better luminous efficiency, which puts forward higher requirements for LED epitaxial growth. [0003] At present, the LED market now requires low driving voltage for LED chips, especially under high current, the smaller the driving voltage, the better, and the higher the light eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/10H01L33/22H01L21/02H01L21/67
CPCH01L33/007H01L33/025H01L33/10H01L33/22H01L21/0254H01L21/0262H01L21/67248H01L21/67253
Inventor 徐平胡耀武龚彬彬谢鹏杰
Owner XIANGNENG HUALEI OPTOELECTRONICS
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