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led epitaxial growth method

A technology of epitaxial growth and growth pressure, which is applied in the manufacture of semiconductor devices, electrical components, semiconductor/solid-state devices, etc. It can solve the problems of low luminous efficiency and large warping of epitaxial wafers, so as to increase the window of stress control and improve luminescence Efficiency, warpage reduction effect

Active Publication Date: 2022-04-22
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the LED size is upgraded to 4 inches, LEDs generally have technical problems such as large warping of epitaxial wafers and low luminous efficiency.

Method used

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Embodiment 1

[0050] The application example of the LED epitaxial growth method of the present invention is provided below, and its epitaxial structure is shown in Fig. 1, figure 1 It is a schematic diagram of the structure of the LED epitaxial layer in the present invention, and the growth method can be found in figure 1 . This application uses VEECO MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 (NH 3 Purity 99.999%) as N source, metal-organic trimethylgallium (TMGa) and metal-organic triethylgallium (TEGa) as gallium source, trimethylindium (TMIn) as indium source, N-type dopant as Silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesocene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 100Torr and 1000Torr. The specific growth method is as follows:

[0051...

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Abstract

The present application discloses a LED epitaxial growth method, which sequentially includes: processing the substrate, growing a low-temperature nucleation layer GaN, growing a high-temperature GaN buffer layer, growing a non-doped u-GaN layer, growing a N 2 and H 2 Mixed atmosphere low temperature AlInGaN: Zn layer, growth of H 2 Atmosphere temperature InGaN: Si layer, growth of N 2 High-temperature GaN atmosphere: Mg layer, growth of luminescent layer, growth of P-type AlGaN layer, growth of P-type GaN layer, growth of P-type GaN contact layer, cooling down. The inventive method introduces N 2 and H 2 Mixed atmosphere low temperature AlInGaN: Zn layer, H 2 Atmosphere temperature InGaN: Si layer, N 2 Atmosphere high temperature GaN: Mg layer structure to enhance the electron-hole pairs in the quantum well light-emitting area, enhance the luminous radiation efficiency, improve the luminous efficiency of the LED, and reduce the warping of the epitaxial wafer.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, and in particular, relates to an LED epitaxial growth method. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is also gradually expanding; The demand for LED brightness and luminous efficiency is increasing day by day in the market. Customers are concerned that LEDs are more power-saving, have higher brightness and better luminous efficiency, which puts forward higher requirements for LED epitaxial growth. [0003] At present, the LED market now requires low driving voltage for LED chips, especially under high current, the smaller the driving voltage, the better, and the higher the light effi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L21/02
CPCH01L33/007H01L33/06H01L33/12H01L21/0242H01L21/02458H01L21/02505H01L21/0254H01L21/0262
Inventor 徐平胡耀武龚彬彬黄胜蓝蒋东风
Owner XIANGNENG HUALEI OPTOELECTRONICS
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