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A LED epitaxial growth method for improving luminous efficiency

A technology of epitaxial growth and luminous efficiency, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low luminous efficiency, low hole concentration, and low hole mobility of LED, and improve hole migration. rate, increase hole concentration, and improve the effect of antistatic ability

Active Publication Date: 2019-05-10
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides an LED epitaxial growth method for improving luminous efficiency, which solves the problem of low hole concentration, low hole mobility, and low LED luminous efficiency in the prior art in the LED epitaxial layer.

Method used

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  • A LED epitaxial growth method for improving luminous efficiency
  • A LED epitaxial growth method for improving luminous efficiency

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Embodiment 1

[0048] Such as figure 2 As shown, it is a schematic diagram of the LED structure of the epitaxial growth method for improving LED luminous efficiency described in this embodiment. The method described in this embodiment solves the problem of the LED epitaxial layer in the prior art.

[0049] The technical problems of low hole concentration, low hole mobility, and low LED luminous efficiency.

[0050] In this example, MOCVD (metal organic compound chemical vapor deposition) is used to grow high-brightness GaN-based LED epitaxial wafers, using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic sources trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the source of aluminum, and the P-type dopant as magnesocene (C...

Embodiment 2

[0066] On the basis of Example 1, this embodiment describes the specific content of the overall growth of the LED epitaxial layer in the present invention. The structural schematic diagram of the LED is as follows figure 2 shown. The LED epitaxial growth method for improving luminous efficiency described in this embodiment includes the following steps:

[0067] Step 501, process the patterned sapphire substrate: Into the reaction chamber of the metal organic chemical vapor deposition system with the substrate placed, simultaneously feed NH with a flow rate of 10000-20000 sccm 3 , 100-130L / min H 2 , increasing the temperature to 900-1000° C., and processing the substrate for 300s-600s under the condition that the reaction chamber pressure is 100-200mbar.

[0068] Step 502, growing a ZnGaN layer, further:

[0069] Keep the pressure of the reaction chamber at 300-400mbar, the temperature at 900-1000°C, and at the same time feed NH with a flow rate of 30000-40000sccm 3 , 100-...

Embodiment 3

[0084] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0085] The growth method of conventional LED epitaxy is (see the epitaxial layer structure figure 1 ):

[0086] Step 101, processing the sapphire substrate: in a hydrogen atmosphere at 1000-1100°C, inject 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100-300mbar (mbar is the air pressure unit), and process the sapphire substrate for 5-10 minutes.

[0087] Step 102, grow low-temperature buffer layer GaN: lower the temperature to 500-600°C, keep the reaction chamber pressure at 300-600mbar, and feed NH with a flow rate of 10000-20000sccm (sccm notes standard milliliters per minute) 3 , 50-100sccm TMGa, 100L / min-130L / min H 2 1. Growing a low-temperature buffer layer GaN with a thickness of 20-40 nm on the sapphire substrate.

[0088] Step 103, corroding the low-temperature buffer layer GaN into an irregular island shape: raise the tempera...

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Abstract

The invention discloses an LED epitaxial growth method capable of improving light-emitting efficiency. The LED epitaxial growth method includes treating a substrate, a ZnGaN layer, an Mg-Si co-doped GaN layer, an AlN layer, a growth Si-doped N-type GaN layer, a growth InxGa(1-x)N / GaN light-emitting layer, a growth P-type AlGaN layer and a growth magnesium-doped P-type GaN layer prior to cooling, wherein x refers to 0.20-0.25. The LED epitaxial growth method has the advantages that epitaxial layer hole concentration and hole mobility are both increased, and radiation efficiency of a light-emitting region is improved, so that the LED light-emitting efficiency is improved, and power-type LED light effect is particularly enhanced remarkably under bulk-current injection.

Description

technical field [0001] The invention relates to the technical field of LED epitaxial growth, and more specifically, to an LED epitaxial growth method for improving luminous efficiency. Background technique [0002] As a lighting source, LED has the advantages of energy saving, long life, small size, high luminous efficiency, no pollution, and rich colors compared with existing traditional lighting sources. At present, the scale of domestic production of LEDs is gradually expanding, and the demand for LEDs and LED light effects in the market is increasing day by day. [0003] At present, the quantum efficiency of LED is still not high, the hole concentration in the LED epitaxial layer is low, the hole mobility is low, and the DROOP effect appears under high current, that is, the LED luminous efficiency decreases under high current. For example, if the epitaxial wafer is prepared by the traditional LED epitaxial growth process, the DROOP effect is serious under high current, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L21/02C30B25/02C30B29/40
CPCC30B25/02C30B29/403C30B29/406H01L21/0242H01L21/0254H01L21/02579H01L21/0262H01L33/007H01L33/06H01L33/14
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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