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Vertical type magnetic random access memory and reading and writing method thereof

A random access memory, magnetic technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of accelerating memory aging, reducing memory capacity, power consumption, etc.

Active Publication Date: 2017-11-21
SHANGHAI CIYU INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a write operation not only consumes power, but also reduces the memory capacity of the memory due to the heat generated by a large amount of non-polarizing current, and accelerates the aging of the memory

Method used

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  • Vertical type magnetic random access memory and reading and writing method thereof
  • Vertical type magnetic random access memory and reading and writing method thereof
  • Vertical type magnetic random access memory and reading and writing method thereof

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Embodiment Construction

[0032] In describing the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", " The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplified descriptions, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as limiting the invention.

[0033] figure 2 It is a structural schematic diagram of a magnetic random access memory of the present invention, which shows a bottom electrode 1 , a reference layer 2 , a barrier layer 3 , a memory layer 4 , a cover layer 5 and a top electrode 6 stacked in sequence. The magneti...

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Abstract

The invention provides a vertical type magnetic random access memory using topological insulators as an electron spin filter. The vertical type magnetic random access memory includes a reference layer, a memory layer, a barrier layer, a spin filter layer composed of topological insulator layers and dielectric layers that are alternately arranged, and a bottom electrode. The magnetization direction of the reference layer is constant and the magnetic anisotropy is perpendicular to the layer surface. The magnetization direction of the memory layer is variable and the magnetic anisotropy is perpendicular to the layer surface. The barrier layer is located between the reference layer and the memory layer and adjacent to the reference layer and the memory layer separately. The spin filter layer includes first and second spaced-apart polarity parts. The first polarity part and the second polarity part are electrically connected with the memory layer separately and form a complete writing circuit. The invention also provides a reading and writing method of the magnetic random access memory.

Description

technical field [0001] The invention relates to the field of semiconductor memory, in particular to a vertical magnetic random access memory using a topological insulator as an electronic spin filter and a reading and writing method thereof. Background technique [0002] Spintronics (Spintronics) is also called magnetoelectronics. It uses the spin and magnetic moment of electrons to add electron spin and magnetic moment to solid-state devices in addition to charge transport. It is a new subject and technology. Materials used in spintronics need to have high electron magnetic polarizability and long electron relaxation time. Many new materials, such as magnetic semiconductors, semimetals (also known as Heusler metals, see: https: / / en.wikipedia.org / wiki / Heusler_alloy), topological insulators (TI, Topological Insulator, reference: Physics and Engineering, Vol. 22, No.1, 2012), etc., have been widely studied in recent years, in order to have the properties required for the app...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/10H01L27/22G11C11/16
CPCG11C11/161G11C11/1673G11C11/1675H10B61/00H10N50/10H10N50/85
Inventor 肖荣福郭一民
Owner SHANGHAI CIYU INFORMATION TECH
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