Circuit substrate and semiconductor device

A technology of circuit substrates and semiconductors, which is applied in the direction of circuit devices, semiconductor devices, circuits, etc., and can solve the problems of limited improvement of TCT characteristics

Active Publication Date: 2017-11-28
KK TOSHIBA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the guaranteed operating temperature is above 175°C, only eliminating the gaps in the protruding part can only improve the TCT characteristics to a limited extent.

Method used

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  • Circuit substrate and semiconductor device
  • Circuit substrate and semiconductor device
  • Circuit substrate and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～13、 comparative example 1～4

[0069] Ceramic substrates 1 to 4 having the characteristics shown in Table 1 were prepared as ceramic substrates, and brazing filler metals shown in Table 2 were prepared as brazing filler metals. The materials in Table 1 are the main components of the ceramic substrate. For example, "silicon nitride" means a ceramic substrate containing silicon nitride as a main component. "Alumina zirconia" means that it contains ZrO 2 (zirconia) alumina as the main component of the ceramic substrate. "Alumina" means a ceramic substrate having alumina as a main component.

[0070] [Table 1]

[0071]

[0072] [Table 2]

[0073]

Solder composition (mass%)

Mass ratio (Ag / Cu)

Solder 1

Ag(76), Cu(23), Ti(1)

3.3

Solder 2

Ag(60), Cu(25), In(10), Ti(5)

2.4

Solder 3

Ag(50), Cu(24), Sn(12), In(6), Ti(7), C(1)

2.1

Solder 4

Ag(48.5), Cu(36), Sn(7), Ti(8), C(0.5)

1.3

Solder 5

Al(99.5),Si(0.5)

－

[0074] Th...

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Abstract

The purpose of the present invention is to improve the thermal cycle test (TCT) characteristics of a circuit substrate. Provided is a circuit substrate comprising a ceramic substrate that has first and second surfaces and first and second metal plates that are bonded to the first and second surfaces with first and second bonding layers interposed therebetween. The three-point flexural strength of the ceramic substrate is at least 500 MPa. At least the L1/H1 of a first protruding section of the first bonding layer or the L2/H2 of a second protruding section of the second bonding layer is in the range 0.5-3.0. At least the average first Vickers hardness at ten locations on the first protruding section or the average second Vickers hardness at ten locations on the second protruding section is 250 or less.

Description

technical field [0001] Embodiments relate to circuit boards and semiconductor devices. Background technique [0002] In recent years, along with the high performance of industrial equipment, the high output of the power module mounted in it has progressed. Along with this, higher output of semiconductor elements is progressing. The guaranteed operating temperature of semiconductor elements is 125°C to 150°C, but there is a possibility that it will rise to 175°C or higher in the future. [0003] With the increase in the guaranteed operating temperature of semiconductor elements, ceramic metal circuit boards are required to have high TCT characteristics. The so-called TCT is thermal cycle test. TCT is a method of measuring the durability of ceramic metal circuit boards by implementing a process of changing the temperature in the order of low temperature → room temperature → high temperature → room temperature as one cycle. [0004] A conventional ceramic metal circuit boar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/13H05K1/02
CPCH01L23/3735H05K1/0265H05K1/0271H05K1/0306H05K3/388H05K3/06H05K2201/0338H05K2201/0355H05K2201/06H05K2201/066H05K2201/10272C04B37/026C04B2237/88C04B2237/86C04B2235/96C04B2237/368C04B2237/407C04B2237/704C04B2237/706C04B2237/343C04B2235/9607C04B2237/125C04B2237/127C04B2237/126C04B2237/128C04B2235/6565H01L23/13H01L23/142H01L23/15H05K1/02H01L21/4807
Inventor 那波隆之加藤宽正梅原政司
Owner KK TOSHIBA
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