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snse with vertical structure 2 /mose 2 Preparation method of novel heterojunction and modification method of its field effect performance

A vertical structure and heterojunction technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of complex vertical structure heterojunction, expensive experimental equipment, toxicity, etc., and achieve low equipment cost and abundant energy. With engineering, the effect that the method of operation is simple

Active Publication Date: 2020-07-31
ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a solution for the complex and time-consuming vertical structure heterojunction of two-dimensional transition metal chalcogenide TMDs prepared by van der Waals epitaxial growth method (VDEW), expensive and toxic experimental equipment, etc. A new type of two-dimensional vertical structure heterojunction SnSe 2 / MoSe 2

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  • snse with vertical structure <sub>2</sub> /mose <sub>2</sub> Preparation method of novel heterojunction and modification method of its field effect performance
  • snse with vertical structure <sub>2</sub> /mose <sub>2</sub> Preparation method of novel heterojunction and modification method of its field effect performance
  • snse with vertical structure <sub>2</sub> /mose <sub>2</sub> Preparation method of novel heterojunction and modification method of its field effect performance

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with specific embodiments. It should be understood that the following examples are only used to illustrate the present invention rather than limit the scope of the present invention, and those skilled in the art can make some non-essential improvements and adjustments based on the content of the above invention.

[0028] The SnSe with vertical structure of this embodiment 2 / MoSe 2 The preparation method of the novel heterojunction is as follows:

[0029] (1) From SnSe by mechanical exfoliation 2 Bulk materials get few-layer SnSe 2 Nanomaterials, transferred to SiO 2 / Si substrate, prepared few-layer SnSe 2 / SiO 2 / Si nanomaterials; from MoSe by mechanical exfoliation 2 Bulk materials get few-layer MoSe 2 Nanomaterials, transferred onto Si substrates, to produce few-layer MoSe 2 / Si nanomaterials;

[0030] (2) The few-layer SnSe prepared in step (1) 2 / SiO 2 / Si nanomaterials are placed on ...

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Abstract

The invention discloses a preparation method of vertical-structure SnSe2 / MoSe2 novel heterojunctions and a method for modifying field effect properties thereof. The preparation method adopts a wet chemical synthesis technical means combining a mechanical peeling method with a rotation transfer method, and prepares a vertical-structure van der Waals heterogeneous semiconductor material based on the two-dimensional transition metal dichalcogenide Se by adjusting specific implement conditions of the technical means of the rotation transfer method. The method is relatively simple and safe, and is suitable for preparing a series of vertical-structure heterojunctions of the two-dimensional transition metal dichalcogenides (TMDs). By the anneal modification of the prepared vertical-structure SnSe2 / MoSe2 van der Waals heterojunctions, optimal anneal modification temperature and time parameters to enhance the field-effect properties of heterojunction devices are selected, the method for modifying the heterojunctions provided by the invention points out the direction for further application of the van der Waals heterojunctions in the field of the new generation of optoelectronic devices.

Description

technical field [0001] The invention belongs to the field of preparation technology and performance application improvement of semiconductor materials, in particular to a SnSe 2 / MoSe 2 A method for preparing a novel heterojunction and a method for greatly improving its field effect performance. Background technique [0002] Since Graphene was successfully prepared by mechanical exfoliation in 2004, due to its excellent mechanical, optical and electrical properties, it has received more and more attention and research as soon as it came out. However, the zero-bandgap characteristic of graphene prevents it from being used as an excellent field-effect channel material. Although people have used many methods to try to open the bandgap of graphene, the obtained bandgap size is only tens of millielectron volts, and the corresponding device The FET ratio is only a maximum of 10 3 , much smaller than the traditional Si transistor’s 10 5 ~10 6 . As a good substitute material f...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/324
CPCH01L21/0256H01L21/324
Inventor 商继敏陈鹏吴杰冯学超杨阳李强杨坤
Owner ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY
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