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Organic Light Emitting Diode Comprising An Organic Semiconductor Layer

A technology for organic semiconductor layers and light-emitting diodes, which is applied in the manufacture of organic semiconductor devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of poor control of the evaporation rate of metal dopants, low doping concentration, and difficult control, and achieve Improved repeatability, improved stability, and safe-to-use effects

Inactive Publication Date: 2017-12-08
NOVALED GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these OLEDs of the prior art may suffer from poor performance
Furthermore, poor control over the evaporation rate of metal dopants is a significant problem when fabricating these OLEDs.
Specifically, the doping concentration of Li is very low and thus difficult to control

Method used

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  • Organic Light Emitting Diode Comprising An Organic Semiconductor Layer
  • Organic Light Emitting Diode Comprising An Organic Semiconductor Layer
  • Organic Light Emitting Diode Comprising An Organic Semiconductor Layer

Examples

Experimental program
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Effect test

Embodiment

[0330] The first host compound comprising at least two phenanthroline groups can be synthesized as described in JP2002352961.

[0331] Bottom emitting device with evaporated emissive layer

[0332] For bottom emitting devices - Examples 1 to 3 and Comparative Examples 1 to 5, 15Ω / cm with 90nm ITO 2 A glass substrate (available from Corning Co.) was cut into a size of 50 mm × 50 mm × 0.7 mm, ultrasonically cleaned with isopropanol for 5 min, then with pure water for 5 min, and again with UV ozone for 30 min to Prepare the first electrode.

[0333] Then, 97% by weight of biphenyl-4-yl(9,9-diphenyl-9H-fluoren-2-yl)-[4-(9-phenyl-9H-carbazol-3-yl)benzene base]-amine (CAS 1242056-42-3) and 3% by weight of 2,2',2"-(cyclopropane-1,2,3-triylidene)tris(2-(p-cyanotetrafluorophenyl ) acetonitrile) is vacuum deposited on the ITO electrode to form a HIL with a thickness of 10nm. Then biphenyl-4-yl (9,9-diphenyl-9H-fluorene-2-yl)-[4-( 9-phenyl-9H-carbazol-3-yl) phenyl]-amine vacuum dep...

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Abstract

The present invention relates to an organic light emitting diode comprising an anode electrode, a cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer are arranged between the anode electrode and the cathode electrode and the organic semiconductor layer comprises a substantially metallic rare earth metal dopant and a first matrix compound, the first matrix compound comprising at least two phenanthrolinyl groups as well as to a method for preparing the same.

Description

technical field [0001] The present invention relates to an organic light emitting diode (OLED) comprising an organic semiconductor layer containing a compound of formula 1 therein, and to a method of manufacturing the organic light emitting diode (OLED) comprising the organic semiconductor layer. Background technique [0002] Organic light-emitting diodes (OLEDs) are self-emitting devices that feature wide viewing angles, excellent contrast, fast response, high brightness, excellent driving voltage characteristics, and color reproduction. A typical OLED includes an anode, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and a cathode sequentially stacked on a substrate. In this regard, the HIL, HTL, EML, and ETL are thin films formed of organic compounds. [0003] When a voltage is applied to the anode and the cathode, holes injected from the anode move to the EML through the HIL and HTL, and electrons i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56C07D519/00H10K99/00
CPCC07D519/00H10K85/111H10K50/12H10K50/828H10K71/30H10K85/351H10K85/6572H10K50/157H10K50/19H10K50/15H10K50/16H10K50/17H10K50/18H10K85/615H10K85/626H10K85/633H10K85/636H10K85/654H10K85/1135H10K2102/3035
Inventor 黄强卡斯滕·罗特托马斯·罗泽诺马丁·克勒
Owner NOVALED GMBH