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Electronic grade polysilicon reduction furnace and production method of polysilicon

A polysilicon and reduction furnace technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of high proportion of popcorn material and high energy consumption, achieve uniform gas and temperature distribution, reduce radiant heat, reduce The effect of restoring power consumption

Active Publication Date: 2022-04-01
江苏鑫华半导体科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Purpose of the invention: In order to solve the problems of high proportion of popcorn material and high energy consumption in the production process of electronic grade polysilicon in the prior art, the present invention provides an electronic grade polysilicon reduction furnace and a production method of polysilicon

Method used

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  • Electronic grade polysilicon reduction furnace and production method of polysilicon
  • Electronic grade polysilicon reduction furnace and production method of polysilicon
  • Electronic grade polysilicon reduction furnace and production method of polysilicon

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Effect test

Embodiment 1

[0046] see Figure 1-7 , where 1 is the chassis, 2 is the furnace body of the reduction furnace, 3 is the inner layer nozzle, 4 is the outer layer nozzle, 5 is the inner layer electrode, 6 is the outer layer electrode, 7 is the exhaust port, and 8 is the gas phase of the inner layer nozzle Channel, 9 is the gas phase channel of the outer layer nozzle, and 10 is a thread.

[0047] The electronic-grade polysilicon reduction furnace includes a chassis 1 and a bell-shaped furnace body 2 covering the chassis. The chassis is provided with multiple pairs of electrodes, multiple nozzles and an exhaust port. The chassis is equipped with 12 pairs of electrodes, and the electrodes are arranged in a 4+8 arrangement, that is, the inner electrode 5 and the outer electrode 6, the inner layer is evenly distributed 4 pairs of electrodes, and the outer layer is evenly distributed 8 pairs of electrodes; the nozzle adopts 4+4 Arrangement mode, that is, inner layer nozzles 3 and outer layer nozzl...

Embodiment 2

[0052] Electronic grade polysilicon reduction furnace structure is the same as embodiment 1, the difference is the chassis (see Figure 8 ) is equipped with 24 pairs of electrodes, and the electrodes adopt a 4+8+12 arrangement, that is, 4 pairs of electrodes are evenly distributed in the inner layer, 8 pairs of electrodes are evenly distributed in the middle layer, and 12 pairs of electrodes are evenly distributed in the outer layer; the nozzle adopts 4+4+8 The arrangement method, that is, 4 nozzles are evenly distributed in the inner layer, 4 nozzles are evenly distributed in the middle layer, and 8 nozzles are evenly distributed in the outer layer. The outlet direction of the gas phase channel of the inner layer nozzle is perpendicular to the direction of the chassis, and the outlet direction of the gas phase channel of the middle layer nozzle and the outer layer nozzle faces the center line of the reduction furnace and forms an included angle of 75-85 degrees with the direct...

Embodiment 3

[0054] (1) In the early stage of silicon rod growth: the molar ratio of hydrogen and trichlorosilane in the raw material gas injected through the nozzle is 6:1, the surface temperature of the silicon rod is 1070°C, and the growth time of the silicon rod is 0h1 ≤30h, the flow rate of feed gas is 80m / s;

[0055] (2) In the middle stage of silicon rod growth: the molar ratio of hydrogen and trichlorosilane in the raw material gas injected through the nozzle is 5:1, the surface temperature of the silicon rod is 1020°C, and the growth time of the silicon rod is 30h2 ≤165h, the flow rate of feed gas is 170m / s;

[0056] (3) In the late stage of silicon rod growth: the molar ratio of hydrogen and trichlorosilane in the raw material gas injected through the nozzle is 5:1, the surface temperature of the silicon rod is 910°C, and the growth time of the silicon rod is 165h3 ≤170h, the flow rate of feed gas is 60m / s.

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Abstract

The invention discloses an electronic-grade polysilicon reduction furnace. The reduction furnace includes a chassis and a furnace body covered on the chassis. The chassis is provided with multiple pairs of electrodes, multiple nozzles and at least one exhaust port. The multiple nozzles are aligned from inside to outside. N layers of concentric circles with increasing radii are arranged in layers; the nozzles are straight tubes; the radii of the concentric circles from small to large are the first nozzle layer, ... the nth nozzle layer, the direction of the nozzle outlet on the first nozzle layer and the chassis Vertical, the direction of the outlet of the nozzle located in the remaining nozzle layer faces the vertical center line of the reduction furnace and forms an included angle of 75-85 degrees with the chassis. The invention also discloses a polysilicon production method. The new arrangement of nozzles effectively ensures the uniform distribution of gas and temperature in the reduction furnace, reduces the flow dead zone and local high temperature zone in the furnace; and strictly controls the molar ratio of raw material gas and the growth temperature of silicon rods. The present invention can control the proportion of popcorn material at 0-10%, and the reduction power consumption is at 50-65Kw*h / Kg Si.

Description

technical field [0001] The invention relates to the production of polysilicon, in particular to an electronic-grade polysilicon reduction furnace and a polysilicon production method. Background technique [0002] The polysilicon reduction furnace is the core reactor of the improved Siemens method, and the reduction furnace is also the main power consumption device in the polysilicon production process. The polysilicon reduction process is a high energy-consuming process. The energy consumption is mainly the energy radiated from the silicon rods to the wall of the reduction furnace, the heat taken away from the tail gas, and the energy consumed by chemical reactions. Among them, the heat taken away by the cooling water on the wall of the reduction furnace accounts for the entire Restore more than 40% of power consumption. [0003] The silicon rods in the polysilicon reduction furnace are heated by electric current and the temperature rises to 1000-1200 ° C. The mixture of tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/035
CPCC01B33/035
Inventor 高召帅李钊吴锋于跃吴鹏
Owner 江苏鑫华半导体科技股份有限公司
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