Field effect transistor structure-based pH sensing device and manufacturing method thereof
A technology of field effect transistors and sensor devices, which is applied in the field of sensors, can solve problems such as low sensitivity, device short circuit, device process difficulty, etc., and achieve the effects of broad application prospects, fast response speed, and high sensitivity
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[0057] Embodiment 1: In this embodiment, a silicon substrate on an insulating layer is used, and the preparation method and the working principle and electrical output characteristics of the pH sensor device are as follows:
[0058] (1) if figure 1 As shown in (a), the front gate oxide layer 13 is deposited on the silicon layer of the silicon substrate on the insulating layer, the deposition method is thermal oxidation, atomic layer deposition or sputtering, and the thickness is 1 nanometer to 10 nanometers;
[0059] (2) if figure 1 As shown in (b), the gate layer 14 is deposited on the front gate oxide layer 13, the deposition method is evaporation or sputtering, and the thickness is tens to hundreds of nanometers;
[0060] (3) if figure 2 As shown in (a), the gate layer 14 and the front gate oxide layer 13 are removed by an etching process until the silicon layer surface of the silicon substrate on the insulating layer to form a gate structure of a field effect transistor...
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