Melting furnace for TFT (thin film transistor) glass

Abstract

The invention provides a melting furnace for TFT (thin film transistor) glass. The melting furnace comprises a cold-top all-electric melting furnace body and a settling pond which are arranged in sequence; a liquid flow hole is arranged in the bottom of the cold-top all-electric melting furnace body, an outlet end of the liquid flow hole is communicated with an ascending channel, and the ascending channel is communicated with a feed inlet of the settling pond; a feed inlet for feeding TFT glass matching materials is arranged in the upper portion of the cold-top all-electric melting furnace body, and multiple furnace electrodes are arranged in the cold-top all-electric melting furnace body; multiple in-pond electrodes and multiple flame-heating spray guns are arranged in the settling pond, and a smoke vent for discharging smoke is arranged in the settling pond; a bubbling device and a furnace ridge are sequentially arranged on a bottom brick of the bottom of the settling pond, and the bubbling device is arranged in the rear of all the in-pond electrodes. By the arrangement that melting is separated from processes of high-temperature settling and homogenizing, high volatilization of boron and defects produced thereby in melting of the TFT glass matching material can be effectively reduced, effective settling and homogenizing of molten glass of the TFT glass are achieved, defects that lines and the like occur to the product are avoided, and quality of the product is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of glass production, in particular to a melting furnace for TFT glass. Background technique [0002] TFT glass belongs to "high boron, high alumina and alkali-free" glass. The composition of TFT glass is boroaluminosilicate glass with boron oxide content of 8-12%. It is easy to produce problems such as phase separation and delamination. The melting temperature of boroaluminosilicate glass is more than 170°C higher than that of ordinary float glass. Usually, the fusion heating and melting method of thermal power combined with oxygen combustion and electric melting is used, but the volatilization rate of boron is as high as 7-10 %, leading to the accumulation of silicon dioxide with a lighter density on the surface of the glass liquid. This silicon-rich material not only has a high melting point and is difficult to melt, but also has a high viscosity, and a large number of microbubbles are gathered in it, whi...

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Problems solved by technology

However, the all-electric melting furnace also has its own defects: (1) the vertical melting method of the electric melting furnace is not conducive to the elimination of microbubbles in the molten glass; (2) the maximum scale of the full-electric melting furnace for the production of high borosilicate generally does not exceed 30 tons / day, otherwise the temperature uniformity in the kiln will be affected, and defects such as stripes will also occur; (3) When the electrode layout or temperature system in the kiln is slightly improper, the uniformity of the product will be greatly affected, and the product qualification rate will be low

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