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Pressure-contact semiconductor device

A semiconductor and crimping type technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem that the crimping-type semiconductor device cannot be converted, and achieve high reliability.

Active Publication Date: 2018-01-02
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Press-contact type semiconductor devices may not be able to convert and control power

Method used

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Examples

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Embodiment approach 1

[0044] refer to Figure 1 to Figure 7 , the pressure-bond type semiconductor device 1 according to Embodiment 1 will be described. The pressure-bonding semiconductor device 1 of the present embodiment includes a pressure-bonding semiconductor element 2 and a pressing portion 6 .

[0045] The pressure-bonding semiconductor element 2 mainly includes a first semiconductor chip 10 , a second semiconductor chip 15 , a first common electrode plate 40 , a first intermediate electrode 20 , a second intermediate electrode 25 , a second common electrode plate 45 and a barrel 50 . The crimp-type semiconductor element 2 may further include a first connection member 30 and a second connection member 35 .

[0046] The first semiconductor chip 10 is a three-terminal type semiconductor element. The first semiconductor chip 10 may also be a semiconductor switching element. Examples of the semiconductor switching element include transistors such as insulated gate bipolar transistors (IGBTs) ...

Embodiment approach 2

[0066] refer to Figure 8 , the pressure-bond type semiconductor device 1a of Embodiment 2 will be described. The pressure-bond semiconductor device 1 a of the present embodiment basically has the same configuration as the pressure-bond semiconductor device 1 of Embodiment 1, but mainly differs in the following points.

[0067] The pressure-bond semiconductor device 1 a of the present embodiment includes a pressure-bond semiconductor element 2 a. The crimp-type semiconductor element 2a of this embodiment does not include the first connecting member 30 and the second connecting member 35 (see figure 2 ). The first common electrode plate 40 and the second semiconductor chip 15 close one or more second through holes 28 . Specifically, the first common electrode plate 40 and the fourth electrode 16 of the second semiconductor chip 15 close one or more second through holes 28 .

[0068] Effects of the pressure-bond type semiconductor device 1a of this embodiment will be descri...

Embodiment approach 3

[0072] refer to Figure 9 to Figure 12 , the pressure-bond type semiconductor device 1b of Embodiment 3 will be described. The pressure-bond semiconductor device 1 b of the present embodiment basically has the same configuration as the pressure-bond semiconductor device 1 of Embodiment 1, but mainly differs in the following points.

[0073] The pressure-bond semiconductor device 1b of this embodiment includes a pressure-bond semiconductor element 2b. The pressure-bond semiconductor element 2b of this embodiment includes a first intermediate electrode 20b. The first intermediate electrode 20 b has one or more first through holes 23 penetrating between the first surface 21 and the second surface 22 . Such as Figure 9 as well as Figure 10 As shown, in this embodiment, the first intermediate electrode 20 b may have one first through hole 23 . Such as Figure 12 As shown, in a modified example of this embodiment, the first intermediate electrode 20b may have a plurality of ...

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PUM

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Abstract

In this pressure-contact semiconductor device (1), a second intermediate electrode (25) on a second semiconductor chip (15) has at least one second through hole (28). The at least one second through hole (28) is fluidly separated from a space (48) hermetically sealed by a tubular body (50), a first common electrode plate (40), and a second common electrode plate (45). Accordingly, the pressure-contact semiconductor device (1) has high reliability.

Description

technical field [0001] The present invention relates to a crimp type semiconductor device. Background technique [0002] As a device for converting or controlling large electric power, a pressure-bonding semiconductor device including a pressure-bonding semiconductor element is known (see Patent Document 1). There is also known a pressure-bond semiconductor device having a stack structure in which a plurality of pressure-bond semiconductor elements and a plurality of heat sink members are alternately stacked (see Patent Document 2 and Patent Document 3). [0003] The pressure contact type semiconductor element includes a 3-terminal type first semiconductor chip such as an insulated gate bipolar transistor (IGBT), and a 2-terminal type second semiconductor chip such as a freewheel diode. The second semiconductor chip is electrically connected in parallel to the first semiconductor chip. The second semiconductor chip, for example, electrically protects the first semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/52H01L25/07H01L25/18
CPCH01L23/04H01L23/051H01L23/62H01L24/72H01L25/072H01L25/117H01L25/18H01L21/52H01L23/10H01L23/40H01L2924/1203H01L2924/13055
Inventor 奥田聪志古川彰彦池田知弘
Owner MITSUBISHI ELECTRIC CORP
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