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Compression type semiconductor device

A semiconductor, pressure-bonding technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem that pressure-bonding semiconductor devices cannot be converted, and achieve high reliability.

Active Publication Date: 2020-06-05
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Press-contact type semiconductor devices may not be able to convert and control power

Method used

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  • Compression type semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0044] refer to Figure 1 to Figure 7 , the pressure-bond type semiconductor device 1 according to Embodiment 1 will be described. The pressure-bonding semiconductor device 1 of the present embodiment includes a pressure-bonding semiconductor element 2 and a pressing portion 6 .

[0045] The pressure-bonding semiconductor element 2 mainly includes a first semiconductor chip 10 , a second semiconductor chip 15 , a first common electrode plate 40 , a first intermediate electrode 20 , a second intermediate electrode 25 , a second common electrode plate 45 and a barrel 50 . The crimp-type semiconductor element 2 may further include a first connection member 30 and a second connection member 35 .

[0046] The first semiconductor chip 10 is a three-terminal type semiconductor element. The first semiconductor chip 10 may also be a semiconductor switching element. Examples of the semiconductor switching element include transistors such as insulated gate bipolar transistors (IGBTs) ...

Embodiment approach 2

[0066] refer to Figure 8 , the pressure-bond type semiconductor device 1a of Embodiment 2 will be described. The pressure-bond semiconductor device 1 a of the present embodiment basically has the same configuration as the pressure-bond semiconductor device 1 of Embodiment 1, but mainly differs in the following points.

[0067] The pressure-bond semiconductor device 1 a of the present embodiment includes a pressure-bond semiconductor element 2 a. The crimp-type semiconductor element 2a of this embodiment does not include the first connecting member 30 and the second connecting member 35 (see figure 2 ). The first common electrode plate 40 and the second semiconductor chip 15 close one or more second through holes 28 . Specifically, the first common electrode plate 40 and the fourth electrode 16 of the second semiconductor chip 15 close one or more second through holes 28 .

[0068] Effects of the pressure-bond type semiconductor device 1a of this embodiment will be descri...

Embodiment approach 3

[0072] refer to Figure 9 to Figure 12 , the pressure-bond type semiconductor device 1b of Embodiment 3 will be described. The pressure-bond semiconductor device 1 b of the present embodiment basically has the same configuration as the pressure-bond semiconductor device 1 of Embodiment 1, but mainly differs in the following points.

[0073] The pressure-bond semiconductor device 1b of this embodiment includes a pressure-bond semiconductor element 2b. The pressure-bond semiconductor element 2b of this embodiment includes a first intermediate electrode 20b. The first intermediate electrode 20 b has one or more first through holes 23 penetrating between the first surface 21 and the second surface 22 . Such as Figure 9 as well as Figure 10 As shown, in this embodiment, the first intermediate electrode 20 b may have one first through hole 23 . Such as Figure 12 As shown, in a modified example of this embodiment, the first intermediate electrode 20b may have a plurality of ...

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PUM

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Abstract

In the pressure-bond type semiconductor device (1), a second intermediate electrode (25) on a second semiconductor chip (15) has one or more second through holes (28). The one or more second through holes (28) are fluidly separated from the space (48) airtightly sealed by the cylindrical body (50), the first common electrode plate (40), and the second common electrode plate (45). Thus, the pressure-bonding type semiconductor device (1) has high reliability.

Description

technical field [0001] The present invention relates to a crimp type semiconductor device. Background technique [0002] As a device for converting or controlling large electric power, a pressure-bonding semiconductor device including a pressure-bonding semiconductor element is known (see Patent Document 1). There is also known a pressure-bond semiconductor device having a stack structure in which a plurality of pressure-bond semiconductor elements and a plurality of heat sink members are alternately stacked (see Patent Document 2 and Patent Document 3). [0003] The pressure contact type semiconductor element includes a 3-terminal type first semiconductor chip such as an insulated gate bipolar transistor (IGBT), and a 2-terminal type second semiconductor chip such as a freewheel diode. The second semiconductor chip is electrically connected in parallel with the first semiconductor chip. The second semiconductor chip, for example, electrically protects the first semiconduc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/52H01L25/07H01L25/18
CPCH01L23/04H01L23/051H01L23/62H01L24/72H01L25/072H01L25/117H01L25/18H01L21/52H01L23/10H01L23/40H01L2924/1203H01L2924/13055
Inventor 奥田聪志古川彰彦池田知弘
Owner MITSUBISHI ELECTRIC CORP
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