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Device and method for preparing gem crystal

A gem and crystal technology, applied in the field of devices for preparing gem crystals, can solve problems such as crystal defects, large crystal stress, and many defects, and achieve the effects of high yield, good growth integrity, and large size.

Pending Publication Date: 2018-01-05
ANHUI CASLATEK LASER TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The pulling method is heated by induction, and it needs to go through operations such as seeding, necking, and equal diameter. Larger and more defects, and cannot grow large-sized crystals; gemstone crystals are mostly high-temperature crystals, and most of the pulling methods use precious metal crucibles (such as iridium crucibles), there is a lot of iridium loss in the process of growing crystals, and the cost is high. higher
[0004] The crucible descending method can also grow larger-sized gemstone crystals, but the crucible descending method also has certain defects, because it is inevitable that the crucible will be slightly vibrated by the transmission device during the crucible descending process. severe defects in the crystal

Method used

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  • Device and method for preparing gem crystal
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  • Device and method for preparing gem crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] A method for growing large size doped Cr:YAG garnet single crystal:

[0060] Ingredients: Accurately weigh according to the actual doping concentration according to the following reaction formula;

[0061] 3xCr 2 O 3 +3(1-x)Y 2 O 3 +5Al 2 O 3 →2Cr 3x Y 3(1—x) Al 5 O 12 ;

[0062] where Cr 2 O 3 (x) is 0.1 mol%, and Cr is used as the raw material 2 O 3 Powder, Y 2 O 3 Powder, Al 2 O 3 Powder, the purity of all raw materials is greater than 99.99%. After accurate weighing, it is fully mixed with a mixer and then pressed into a cake shape by isostatic pressing. Put the YAG seed crystal into the seed tank at the bottom of the inner cavity of the crucible, put the mixed raw materials pressed into a cake shape into the crucible, place the crucible on the top of the crucible rod, fix the bottom thermocouple on the crucible rod, and the thermocouple head At the bottom of the crucible cone, and wrap the crucible rod and crucible with a heat preservation sleev...

Embodiment 2

[0071] A method for growing large size doped Ce:Sm:YAG garnet single crystal:

[0072] Ingredients: Accurately weigh according to the actual doping concentration according to the following reaction formula,

[0073] 3xCe 2 O 3 +3ySm 2 O 3 +3(1-x-y)Y 2 O 3 +5Al 2 O 3 →2Ce 3x Sm 3y Y 3(1—x-y) Al 5 O 12 ;

[0074] where Ce 2 O 3 (x) is 0.1 mol%, Sm 2 O 3 (y) is 0.05mol%, and the raw material adopts Ce 2 O 3 , Sm 2 O 3 Powder, Y 2 O 3 Powder, Al 2 O 3 Powder, the purity of all raw materials is greater than 99.99%.

[0075] Using the same process and temperature gradient as in Example 1, gem crystals are grown to obtain Ce:Sm:YAG single crystal gemstones.

Embodiment 3

[0077] A method for growing large size doped Ce:Tm:YAG single crystal:

[0078] According to the following reaction formula, accurate weighing is carried out according to the actual doping concentration,

[0079] 3xCe 2 O 3 +3yTm 2 O 3 +3(1-x-y)Y 2 O 3 +5Al 2 O 3 →2Ce 3x Tm 3y Y 3(1—x-y) Al 5 O 12

[0080] Among them, x is 0.1mol%, y is 0.05mol%, and the raw material is Ce 2 O 3 , Tm 2 O 3 Powder, Y 2 O 3 Powder, Al 2 O 3 Powder, the purity of all raw materials is greater than 99.99%.

[0081] Using the same process and temperature gradient as in Example 1, gem crystals were grown to obtain Ce:Tm:YAG single crystal gemstones.

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Abstract

The invention discloses a device and method for preparing a gem crystal. The device comprises a crucible sub-device and a heat preservation sub-device arranged around the crucible sub-device, the crucible sub-device is used for providing a growth place for a gem crystal, the heat preservation sub-device can move up and down relative to the crucible sub-device, so that a temperature zone with an adjustable temperature gradient is provided for the growth of the gem crystal through the up-and-down movement of the heat preservation sub-device. Through the manner, the device and method provided bythe invention can be used for the growth of gem crystals which have good growing integrity, no bubbles, no enveloping, large size and high finished product rate.

Description

technical field [0001] The invention relates to the technical field of gem crystal preparation, in particular to a device and method for preparing gem crystals. Background technique [0002] There are many kinds of natural gemstones in nature, including ruby, sapphire, pure beryl, jade, garnet, etc. These gemstones are beautiful in color and hard in texture, and are popular gemstones. The civilian market is large and expensive, but the resources of natural gemstones are very small, which cannot meet the growing demand of people. Therefore, the technology of artificially synthesizing the above-mentioned gemstones has emerged. The technologies used are mainly solution method, hydrothermal method, flame method, cosolvent method, etc., but the crystal blanks obtained by these methods are small and have no actual decorative value. Later, the pulling method was invented, and people can gradually grow larger-sized gem crystals by using the pulling method. [0003] The pulling met...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/20
Inventor 董永军
Owner ANHUI CASLATEK LASER TECH CO LTD