Welding method of target assembly

A welding method and target technology, which are applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problem that the welding strength of target components needs to be improved, and achieve the improvement of welding strength, which is conducive to atomic diffusion and increases adhesion. Effect

Inactive Publication Date: 2018-01-09
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, using the welding method of the target assembly in the prior art, the welding strength of the target assembly needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Welding method of target assembly
  • Welding method of target assembly
  • Welding method of target assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] As described in the background art, the welding strength of the welding method of the target assembly in the prior art needs to be improved.

[0031] A welding method for a target assembly, comprising: providing a target and a back plate; and welding the target and the back plate together by using a hot isostatic pressing process.

[0032] However, in the above method, since the welding surfaces of the target material and the back plate are relatively smooth, the adhesion between the target material and the back plate is relatively small, resulting in that the target material and the back plate are not tightly bonded during the hot isostatic pressing process. Atoms diffuse to a lesser extent between the plates. The welding strength of the target assembly is reduced.

[0033] On this basis, the present invention provides a welding method of a target assembly, comprising: providing a target and a back plate, the target has a first welding surface, and the back plate has ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
angleaaaaaaaaaa
angleaaaaaaaaaa
Login to view more

Abstract

Disclosed is a welding method of a target assembly. The method comprises the steps of providing a target material and a back plate, wherein the target material is provided with a first welding face, and the back plate is provided with a second welding face; adopting a turning process to form lines on the first welding face or the second welding face, and adopting the hot isostatic pressure processto enable the first welding face and the second welding face to be welded together. According to the welding method of the target assembly, the lines are formed on the first welding face so as to increase roughness of the first welding face, or the lines are formed on the second welding face to increase roughness of the second welding face; in the hot isostatic pressure process, the lines on thefirst welding face can be embedded on the back plate or the lines on the second welding face can be embedded in a target material; atom diffusion between the target material and the back late is facilitated in the hot isostatic pressure process, and welding strength of the target assembly is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method for target components. Background technique [0002] In the semiconductor industry, a target assembly needs to meet the sputtering performance, and the target assembly includes a target and a back plate combined with the target and having a certain bonding strength. The back plate plays a supporting role when the target assembly is assembled to the sputtering base station, and has the effect of conducting heat. In the magnetron sputtering coating process, the target component is in a high-voltage electric field and a magnetic field with a strong magnetic field. The target is sputtered under the action of high-energy ion bombardment, and the neutral atoms or molecules sputtered from the target deposited on a substrate to form a thin film. During the entire sputtering process, the target assembly is in a high-temperature environment, and the sputtering ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/02B23K20/24
Inventor 姚力军潘杰相原俊夫王学泽朱锦程
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap