Cell sheet assembly, cell sheet matrix and solar cell assembly
A cell and module technology, applied in the field of solar cells, can solve the problems of large amount of connecting cables, decreased cell efficiency, damage to cells and conductive tapes, etc., and achieves the effect of reducing the length of use, improving the overall power, and reducing the amount of use.
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Embodiment 1
[0128] refer to Figure 5-Figure 9 The cell sheet 100 includes: a silicon wafer 1, a front conductive member, a side conductive member 3, a first electrode 4, a back electric layer 60, and a second electrode 5, wherein the front conductive member is a front grid line layer 2, and the silicon wafer 1 can be It includes a silicon substrate 11 , a front first type diffusion layer 12 , a side spacer 13 and a back side spacer 14 .
[0129] The silicon substrate 11 is sheet-shaped, and the two surfaces in the thickness direction of the silicon substrate 11 are respectively a light-receiving surface and a backlight surface, and the light-receiving surface and the backlight surface are connected through side surfaces. Wherein, the front first-type diffusion layer 12 is arranged on the light-receiving surface of the silicon substrate 11, for example, in a preferred embodiment of the present invention, the front-side first-type diffusion layer 12 is covered with the light-receiving surf...
Embodiment 2
[0172] refer to Figure 10-Figure 14 , the structure of this embodiment 2 is substantially the same as that of embodiment 1, wherein the same components use the same reference numerals, the difference is only that: the second region in embodiment 1 is provided with a back electric layer 60, and the back electric layer 60 is provided with the second electrode 5, and the second region in this embodiment 2 is provided with the back second type diffusion layer 15, and the back second type diffusion layer 15 is provided with the back second gate line layer 6 and the second electrode 5.
[0173] The battery sheet 100 includes: a silicon wafer 1, a front conductive part, a side conductive part 3, a first electrode 4, a second grid line layer 6 and a second electrode 5 on the back side, wherein the front conductive part is the front grid line layer 2, and the silicon chip 1 may include a silicon substrate 11, a front first-type diffusion layer 12, a back-side second-type diffusion la...
Embodiment 3
[0190] refer to Figure 15-Figure 19 , the structure of this embodiment 3 is substantially the same as that of embodiment 2, wherein the same components use the same reference numerals, the only difference is that the first region and the second region in embodiment 2 have no intersection and no contact with each other, However, in Embodiment 3, the first area and the second area have no intersection and are in contact with each other, that is, the contour line of the first area is in contact with the contour line of the second area.
[0191] Specifically, the first region and the second region have no intersection and are in contact with each other, and the first electrode 4 is arranged on the first region, that is to say, the first electrode 4 can be directly or indirectly arranged on the first region, at this time, the second An electrode 4 is provided on the backlight surface of the silicon wafer 1 and is opposite to the first area, that is, projected along the thickness d...
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