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OLED base plate and manufacturing method thereof

A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of poor OLED device performance stability, no light emission, weak light emission, etc., and achieve improved light emission uniformity and Performance stability, uniform thickness, and improved uniformity

Inactive Publication Date: 2018-01-09
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

The electric field of an OLED device is generated by the voltage applied across the OLED device. At the same voltage, the electric field strength is inversely proportional to the thickness of the film, that is to say, where the film is thick, the energy level tilts less, and the carrier tunneling injection The probability of reducing the light emission is weak or even no light emission, which causes the effective light emitting area of ​​the OLED substrate to decrease, and makes the performance stability of the OLED device worse.

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  • OLED base plate and manufacturing method thereof
  • OLED base plate and manufacturing method thereof
  • OLED base plate and manufacturing method thereof

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Embodiment Construction

[0057] In order to further explain the technical means adopted by the present invention and its effects, the following describes in detail the preferred embodiments of the present invention and the accompanying drawings.

[0058] See figure 2 , The present invention provides a manufacturing method of an OLED substrate, including the following steps:

[0059] Step 1, such as image 3 As shown, a base substrate 10 is provided, and a plurality of anodes 20 arranged at intervals are formed on the base substrate 10;

[0060] Specifically, the base substrate 10 is a transparent substrate, preferably a glass substrate.

[0061] Specifically, the plurality of anodes 20 are formed by a method of magnetron sputtering film formation, the materials of the plurality of anodes 20 include transparent conductive metal oxide, and the film thickness of the anode 20 is between 20 nm and 200 nm. Preferably, the transparent conductive metal oxide is indium tin oxide (ITO).

[0062] Step 2, such as Figure...

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Abstract

The invention provides an OLED base plate and a manufacturing method thereof. The manufacturing method of the OLED base plate comprises the step of setting the shape of a pixel area to be a first pattern composed of a rectangle and two semicircles connected with two short sides of the rectangle and a second pattern composed of a rectangle with four round corners, so that uniformity of a film formed by ink-jet printing in a pixel area can be effectively improved, and thus uniformity of luminance and stability of performance of an OLED device are effectively improved. The ink-jet printed film layer in the OLED base plate provided by the invention is uniform in thickens, so that the OLED device is uniform in luminance and stable in performance.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to an OLED substrate and a manufacturing method thereof. Background technique [0002] Organic Light Emitting Display (OLED) has self-luminescence, low drive voltage, high luminous efficiency, short response time, high definition and contrast, close to 180° viewing angle, wide operating temperature range, flexible display and Large-area full-color display and many other advantages are recognized by the industry as the display device with the most development potential. [0003] According to the driving mode, OLED can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED) two categories, namely direct addressing and thin film transistor matrix addressing. Among them, AMOLED has pixels arranged in an array, is an active display type, has high luminous efficiency, and is usually used as a high-definition large-size displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56H01L27/32
CPCH10K71/00H10K71/135H10K59/122
Inventor 艾娜林如梅井口真介
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD