A kind of ultraviolet detector and its manufacturing method
A technology of an ultraviolet detector and a manufacturing method, which is applied in the field of ultraviolet detectors and their manufacturing, can solve the problems of reduced device responsivity, difficulty in simultaneous optimization, and difficulty in further improvement, etc., so as to reduce dark current, optimize responsivity, and improve Responsiveness effect
Active Publication Date: 2019-10-25
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology
The current modification methods are generally difficult to optimize these three important parameters at the same time
Especially for the response time of the device, it is difficult to further improve, and it is likely to be accompanied by a decrease in the responsivity of the device
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[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0040] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0041] refer to Figure 1-Figure 5 , Figure 1-Figure 5 A schematic flow chart of a method for manufacturing an ultraviolet detector provided in an embodiment of the present invention, the method includes:
[0042...
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The invention discloses an ultraviolet detector and a manufacturing method thereof. The manufacturing method includes: providing a substrate; forming a ZnMgO layer on the surface of the substrate; the surface of the ZnMgO layer includes an electrode area and a non-electrode area; The electrode region forms an electrode, and the electrode surface has In particles; the non-electrode region is modified with fluorine so that the non-electrode region has a fluorine-containing functional group; wherein the functional group is used to increase the amount of oxygen adsorbed and adsorption rate. The technical solution of the invention can simultaneously optimize the three characteristics of the ultraviolet detector, the responsivity, the dark current and the response time.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an ultraviolet detector and a manufacturing method thereof. Background technique [0002] Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. At present, the ultraviolet detectors that have been put into commercial use mainly include silicon detectors, photomultiplier tubes and semiconductor detectors. Silicon-based ultraviolet photocells need to be accompanied by filters, and photomultiplier tubes need to work at high voltages, and they are bulky, low in efficiency, easy to damage, and high in cost, which has certain limitations for practical applications. Compared with silicon detectors and photomultiplier tubes, semiconductor materials have attracted much attent...
Claims
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IPC IPC(8): H01L31/0296H01L31/101H01L31/18
CPCY02P70/50
Inventor 陈星刘可为李炳辉张振中申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI