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Methods of Improving Faraday Ring Resistance

A technology of Faraday rings and resistors, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as temperature differences in film formation, and achieve the effects of low sheet resistance, good step coverage, and good fusion characteristics

Active Publication Date: 2020-06-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This may be due to the large difference in the film forming temperature of the two processes

Method used

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  • Methods of Improving Faraday Ring Resistance
  • Methods of Improving Faraday Ring Resistance
  • Methods of Improving Faraday Ring Resistance

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Experimental program
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Embodiment Construction

[0012] The method for improving Faraday loop resistance described in the present invention, as figure 1 As shown, after the polysilicon gate of the LDMOS device is formed, a layer of tungsten silicide film 1 is first deposited on the polysilicon gate (including the deposition of a covering silicon oxide dielectric layer on the polysilicon gate) by PVD method, Due to the better step coverage performance of the PVD deposition process, the tungsten silicide film 1 has a good adhesion effect directly to the polysilicon or silicon oxide, and can perfectly fit the surface topography of the polysilicon gate.

[0013] Then again figure 2 As shown, on the previous basis, a tungsten silicide film 2 is deposited by CVD method, and the tungsten silicide film formed by CVD can be well bonded to the tungsten silicide film formed by PVD, and has a lower sheet resistance. Through the two-step tungsten silicide film formation method, the first layer of PVD tungsten silicide film can effectiv...

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Abstract

The invention discloses a method for improving resistance of a Faraday ring. The method comprises the steps of firstly depositing one tungsten silicide film by using a PVD method; and then depositingthe other tungsten silicide film by using a CVD method. Through a two-step tungsten silicide film forming method, one tungsten silicide film is firstly grown through PVD, so that a gap formed by a steep shape and form of polysilicon or silicon oxide can be effectively avoided; and the other tungsten silicide film is grown through CVD, and the same material has good fusion characteristics, so thatrelatively good step coverage and relatively low film resistance can be taken into account.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving Faraday ring resistance. Background technique [0002] In the RF LDMOS (radio frequency LDMOS) manufacturing process, the sidewall morphology of the gate is relatively steep. The Faraday ring (Faraday ring Shield) is a layer of silicide covering the polysilicon gate to modulate the electric field. The silicide is generally tungsten silicide of CVDLPG. Because the step coverage performance is not very good, it is easy to generate gaps, and when the line width of the Faraday ring becomes smaller, it is easy to cause peeling in the step of wet cleaning after etching on the tungsten silicide. [0003] Depositing tungsten silicide by PVD method can better solve the problem of step coverage. However, after the tungsten silicide etching process, an oxide layer is deposited to form borophosphosilicate glass and a high-temperature reflow process is perfo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L21/423
Inventor 程晓华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP