Preparation method of modified cadmium telluride thin film solar cell

A technology of solar thin film and solar energy, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high investment cost, inability to use, and narrow application range of greenhouses, etc., achieve good overall visual effects, increase service life, and improve visual effects Effect

Inactive Publication Date: 2018-01-19
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Soda-lime glass has a small thermal conductivity and poor surface hardness, which leads to poor impact resistance and slow heat transfer of components, which reduces its service life and increases its use cost
At the same time, the traditional CdTe thin-film solar cells need to be

Method used

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  • Preparation method of modified cadmium telluride thin film solar cell
  • Preparation method of modified cadmium telluride thin film solar cell
  • Preparation method of modified cadmium telluride thin film solar cell

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preparation example Construction

[0047] The technical solution provided by the invention is a method for preparing an improved cadmium telluride solar thin-film battery, comprising the following steps:

[0048] 1) A layer of N-type layer and a light-absorbing layer are sequentially covered on the upper surface of the conductive glass to obtain a solar electrode sheet; wherein, the conductive glass is obtained by covering a layer of TCO or FTO film on the upper surface of soda-lime glass;

[0049] 2) Covering the upper surface of the solar electrode sheet prepared in step 1) with a back contact layer, bonding a back sheet on the back contact layer to obtain a prefabricated part, the back sheet is 2.5D tempered glass;

[0050] 3) Laminate the preform in an autoclave laminator for 2-4 hours under the conditions of 100-120° C. and 0.3-1.5 Mpa, and then remove the vacuum bag to obtain an improved cadmium telluride solar thin film battery.

Embodiment 1

[0053] A method for preparing an improved cadmium telluride solar thin film battery, comprising the following steps:

[0054] 1) Cover a layer of TCO film, CdS film and CdTe film on the upper surface of the soda-lime glass in order to obtain a solar electrode sheet, wherein the thicknesses of the TCO film, CdS film and CdTe film are 150nm, 45nm and 3000nm respectively

[0055] 2) Cover the upper surface of the solar electrode sheet prepared in step 1) with a layer of ZnTe:Cu, and combine 2.5D tempered glass with ZnTe:Cu by adding POE polymer to obtain a prefabricated part, wherein, 2.5D tempered glass The thickness of the glass is 3.2mm, after the edge is curved, the width of the arc is 3mm, the thickness of ZnTe:Cu is 350nm, and the thickness of the polymer POE is 0.4mm;

[0056] 3) Laminate the preform obtained in step 2) under the conditions of 100°C and 1 Mpa for 2 hours in an autoclave laminator, and remove the vacuum bag to obtain an improved cadmium telluride solar thin...

Embodiment 2

[0059] A method for preparing an improved cadmium telluride solar thin film battery, comprising the following steps:

[0060] 1) A layer of TCO film, CdS film and CdTe film is covered successively on the upper surface of soda lime glass to obtain a solar electrode sheet, wherein the thicknesses of the TCO film, CdS film and CdTe film are respectively 150nm, 45nm and 2500nm;

[0061] 2) Cover the upper surface of the solar electrode sheet prepared in step 1) with a layer of ZnTe:Cu, and combine 2.5D tempered glass with ZnTe:Cu by adding POE polymer to obtain a prefabricated part, wherein, 2.5D tempered glass The thickness of the glass is 2.0mm, after the edge is curved, the width of the arc is 5mm, the thickness of ZnTe:Cu is 350nm, and the thickness of the polymer POE is 0.4mm;

[0062] 3) Laminate the preform obtained in step 2) under the conditions of 100°C and 1 Mpa for 2 hours in an autoclave laminator, and remove the vacuum bag to obtain an improved cadmium telluride sola...

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Abstract

The invention discloses a preparation method of a modified cadmium telluride thin film solar cell, which comprises the following steps: (1) preparing a solar electrode slice; (2) covering the upper surface of the solar electrode slice prepared in step (1) with a back contact layer transition layer, and bonding a backplane to the back contact layer transition layer to get a prefabricated component,wherein the backplane is 2.5D toughened glass; and (3) laminating the prefabricated component at high pressure under vacuum, and removing a vacuum bag, thus obtaining a modified cadmium telluride thin film solar cell. The invention provides a preparation method of a modified cadmium telluride thin film solar cell. The cadmium telluride thin film solar cell prepared by the invention has the characteristics of good self-sealing effect, rounded corners, good overall visual effect, wide application range, low use cost, and the like.

Description

technical field [0001] The invention relates to the application field of photovoltaic technology, in particular to a preparation method of an improved cadmium telluride solar thin film battery. Background technique [0002] With the continuous advancement of modern science and technology, the consumption of fossil energy is too large, and the environmental pollution is becoming more and more serious. Solar energy has won the favor of the times because of its clean, environmentally friendly and renewable characteristics. Thin-film solar cells are widely used because they can directly convert solar energy into electrical energy with only a few μm. Cadmium telluride (CdTe) thin film solar cell is a compound semiconductor thin film solar cell with CdTe as the absorbing material, because of its best band gap, good weak light effect, large light absorption coefficient, high theoretical conversion efficiency and low manufacturing cost, etc. The characteristics have attracted the a...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0445
CPCY02E10/50Y02P70/50
Inventor 彭寿马立云潘锦功殷新建邬小凤
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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