Metal buried layer high heat radiation GaN diode structure and manufacturing method thereof

Abstract

The invention discloses a metal buried layer high heat radiation GaN diode structure and a manufacturing method thereof. According to the method, a metal buried layer is arranged between a GaN epitaxial layer of the GaN diode structure and a substrate, and the metal buried layer is a three-layer metal heat conduction layer. The method is advantaged in that the characteristic of high metal heat conductivity is utilized, in combination with the Bonding technology to make the metal having high metal heat conductivity between the substrate and the GaN, so a heat radiation problem of the GaN deviceis solved.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a GaN diode structure with a metal buried layer and high heat dissipation and a preparation method thereof. Background technique [0002] In the production process of semiconductor chips, metal electrodes need to be made. Gallium nitride material is a representative of the third-generation semiconductor. An order of magnitude larger, very suitable for making high-power devices. At the same time, the high electron saturation velocity and thermal conductivity of gallium nitride also make its advantages more prominent in the high-frequency field, so GaN has obvious advantages in high-frequency, high-voltage and high-power devices. [0003] However, like traditional power devices, the temperature rises rapidly under high-frequency and high-power conditions, so the heat dissipation technology of power devices is particularly critical. If the heat generated by the devi...

AI Technical Summary

Problems solved by technology

[0003] However, like traditional power devices, the temperature rises rapidly under high-frequency and high-power conditions, so the heat dissipation technology of power devices is particularly critical. If the heat generated by the device cannot be dissipated in time, the performance of the device will be degraded, and then Device failure

[0004] GaN diodes made of Si substrates have attracted much attention because of their low finished products. However, the thermal conductivity of Si materials is very low, resulting in more obvious self-heating effects of Si-based GaN devices, which seriously restricts the application of its power characteristics.

Although SiC material has good thermal conductivity, the self-heating effect of GaN devices based on SiC is also reduced accordingly, but high-temperature reliability in high-power applications is still a challenge, and SiC substrates are very expensive, which is not conducive to the development of civilian applications. to promote

[0005] The heat dissipation scheme currently adopted is to design the heat dissipation of the packaged chip. The overall heat dissipation structure occupies a relatively large space in the module, which affects the reduction of volume and the improvement of efficiency.

The heat dissipation structure of the device is in direct contact with the Si substrate, and the heat generated by the GaN device is transferred out through Si, but the thermal conductivity of the Si material is too poor to effectively dissipate all the heat, so there are still certain limitations

[0006] In addition, in the existing technology, the heat generated by GaN devices is exported by etching deep through holes (hundreds of microns) on the back and filling them with gold plating, but the process cost is high, and there is a risk of environmental pollution in electroplating. Moreover, it is easy to cause damage to the device during the etching process.

Images