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Self-supporting vertical structure LED chip and preparation method thereof

An LED chip, vertical structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor heat dissipation performance of sapphire substrate, expensive equipment and solder, and reduced luminous efficiency, etc., to achieve high luminous efficiency LED, reduce Production cost, the effect of improving luminous efficiency

Pending Publication Date: 2018-01-30
江门市奥伦德光电有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional sapphire substrates have poor heat dissipation performance, and it is difficult to use sapphire substrates to produce high-power LEDs. Working at high currents will lead to a rapid increase in junction temperature and greatly reduce luminous efficiency.
A better method is to transfer the substrate, that is, P-GaN is welded on a Cu or Si substrate using gold-tin-AuSn alloy by welding, and then the substrate is peeled off by laser. The equipment and solder used in this method are expensive and prone to virtual Soldering, missing soldering and other problems, and the process is complicated

Method used

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  • Self-supporting vertical structure LED chip and preparation method thereof
  • Self-supporting vertical structure LED chip and preparation method thereof
  • Self-supporting vertical structure LED chip and preparation method thereof

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Embodiment Construction

[0027] refer to figure 1 , a specific structural diagram of the first embodiment of a self-supporting vertical structure LED chip of the present invention before peeling off the substrate, which is a structural diagram before peeling off the substrate in the LED chip manufacturing process, including LiGaO 2 Substrate 100, metal thin film 200, N-GaN layer 300, InGaN / GaN quantum well 400, P-GaN layer 500 and p-electrode 600, the metal thin film 200, N-GaN layer 300, InGaN / GaN quantum well 400, The p-GaN layer 500 and the p-electrode 600 are sequentially arranged on the LiGaO 2 on the substrate 100. The thickness of the metal film 200 is 30-200 microns, and the metal film 200 is an Al single crystal film or a Cu single crystal film.

[0028] refer to figure 2 , a specific structural diagram of the second embodiment of a self-supporting vertical structure LED chip of the present invention before peeling off the substrate, which is a structural diagram before peeling off the su...

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Abstract

The invention discloses a self-supporting vertical structure LED chip and a preparation method thereof. The physical characteristics of a LiGaO2 material are used. During rapid annealing, a LiGaO2 substrate automatically breaks up due to thermal shock to directly separate the LiGaO2 substrate from a metal film, so as to realize automatic stripping of the substrate. The preparation process of the LED chip is simplified. The manufacture cost is reduced. In addition, the metal film is directly used as the supporting substrate of a vertical structure, which can play the role of an electrode. The metal heat dissipation performance is great. Current distribution is even. The problem of current crowding is avoided. The light emitting efficiency is improved. A high power LED can be realized. Lightshielding of the electrode is realized. The light emitting area of the LED chip is improved. The metal film can reflect light, which helps to improve the light extraction efficiency to realize a highluminous efficiency LED.

Description

technical field [0001] The invention relates to the field of vertical structure LED chips, in particular to a self-supporting vertical structure LED chip and a preparation method thereof. Background technique [0002] At present, LEDs are widely used, and LEDs are an inevitable trend in the development of lighting and display fields in the future. High-efficiency and high-power LEDs are one of the mainstream trends in future development. However, traditional sapphire substrates have poor heat dissipation performance, and it is difficult to use sapphire substrates to manufacture high-power LEDs. Working at high currents will lead to a rapid increase in junction temperature and greatly reduce luminous efficiency. A better method is to transfer the substrate, that is, P-GaN is welded on a Cu or Si substrate using gold-tin-AuSn alloy by welding, and then the substrate is peeled off by laser. The equipment and solder used in this method are expensive and prone to virtual Weldin...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/36
CPCY02P70/50
Inventor 杨为家吴质朴何畏陈强
Owner 江门市奥伦德光电有限公司
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