Self-supporting vertical structure LED chip and preparation method thereof
An LED chip, vertical structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor heat dissipation performance of sapphire substrate, expensive equipment and solder, and reduced luminous efficiency, etc., to achieve high luminous efficiency LED, reduce Production cost, the effect of improving luminous efficiency
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[0027] Reference figure 1 , The specific structure diagram of the first embodiment of a self-supporting vertical structure LED chip of the present invention before the substrate is peeled off. This figure is a structure diagram of the LED chip before the substrate is peeled off during the preparation process, including LiGaO 2 The substrate 100, the metal film 200, the N-GaN layer 300, the InGaN / GaN quantum well 400, the P-GaN layer 500 and the p electrode 600, the metal film 200, the N-GaN layer 300, the InGaN / GaN quantum well 400, The P-GaN layer 500 and the p electrode 600 are sequentially arranged on LiGaO 2 On the substrate 100. The thickness of the metal film 200 is 30-200 microns, and the metal film 200 is an Al single crystal film or a Cu single crystal film.
[0028] Reference figure 2 , The specific structure diagram of the second embodiment of a self-supporting vertical structure LED chip of the present invention before the substrate is peeled off. This figure is a str...
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