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Semiconductor device

A technology for semiconductors and thick-walled parts, which is used in semiconductor devices, semiconductor/solid-state device components, and electric solid-state devices. Increase in size, reducing the effect of thermal interference

Inactive Publication Date: 2018-02-06
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, in order to suppress an increase in material cost, it is necessary to reduce the area where the thick part is formed as small as possible, so the distance between the part where the IC chip is mounted and the part where the power chip is mounted in the thick part is shortened. , there is a problem that the thermal interference from the power chip to the IC chip becomes larger

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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Effect test

Embodiment approach 1

[0025] Next, Embodiment 1 of the present invention will be described using the drawings. figure 1 It is a plan view of the semiconductor device 1 according to the first embodiment. figure 2 is a cross-sectional view of the semiconductor device 1, more specifically, is figure 1 The II-II line sectional view. it's here, figure 1 It is a drawing showing before the connecting rod cutting process. In addition, toward figure 1 , the left-right direction will be described as the X-axis direction, and the up-down direction will be described as the Y-axis direction.

[0026] Such as figure 1 and figure 2 As shown, the semiconductor device 1 is, for example, a power module, and includes power chips 8 and 9 , an IC chip 10 , a lead frame 2 , a molding resin 15 , an insulating layer 6 , and a heat sink 7 . The lead frame 2 includes: an inner lead 2a encapsulated by a molding resin 15; an outer lead 2b connected to the inner lead 2a; and an outer frame portion 2c connected to the ...

Embodiment approach 2

[0045] Next, a semiconductor device 1A according to Embodiment 2 will be described. Figure 5 It is a cross-sectional view of the semiconductor device 1A according to the second embodiment. In addition, in Embodiment 2, the same constituent elements as those already described in Embodiment 1 are given the same reference numerals, and description thereof will be omitted. In addition, in Figure 5 The illustration of the molding resin 15 is omitted hereafter.

[0046] Such as Figure 5 As shown, in the second embodiment, the structure in which the thick portion 4 is sunk downward is employed. More specifically, by fixing the connection portion of the thin portion 3 with the thick portion 4 in a state of being bent downward, the upper surface of the thick portion 4 is placed on the upper surface of the thinner portions 3, 3a. The height position of the surface is low.

[0047] And, if the sum of the sinking dimension of the thick-walled portion 4 and the thickness of the thi...

Embodiment approach 3

[0051] Next, a semiconductor device 1B according to Embodiment 3 will be described. Figure 6 It is a cross-sectional view of the semiconductor device 1B according to the third embodiment. In addition, in Embodiment 3, the same components as those already described in Embodiments 1 and 2 are assigned the same reference numerals and description thereof will be omitted.

[0052] Such as Figure 6 As shown, in Embodiment 3, the thick portion 4 and the thin portions 3, 3a are formed of different members, and the thick portion 4 is formed of a member having higher thermal conductivity than the thin portions 3, 3a. More specifically, the thick portion 4 includes: a first member 4a arranged on the lower surface of the thin portion 3; and a second member 4b arranged on the lower surface of the first member 4a. Here, the first member 4a is formed of, for example, silver, and the second member 4b is formed of, for example, pure copper. Alternatively, the first member 4a may be formed...

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Abstract

The object of the invention is to provide a semiconductor device capable of reducing the thermal interference, improving the heat radiation property, and suppressing the increase of the product cost.The semiconductor device (1) includes power chips (8, 9), an IC chip (10) for driving the power chips (8, 9), and a leading wire frame (2) provided with a thin film portion (3, 3a) and a thick wall portion (4) thicker than the thickness of the thin wall portion (3, 3a), the power chips (8, 9) are arranged on the thick wall portion (4), and the IC chip (10) is arranged on the thin wall portion (3a).

Description

technical field [0001] The present invention relates to a power semiconductor device constituting a power conversion device such as an inverter, and particularly relates to a structure in which lead frames partially have different thicknesses. Background technique [0002] DIPIPM (Dual Inline Package Intelligent Power Module), which is a transfer molded package of semiconductor devices for electric power, requires high heat dissipation and insulation. In order to improve heat dissipation, it is effective to increase the thickness of the lead frame directly under the chip bonded via the bonding material to promote thermal diffusion at a stage before heat is input to the insulating sheet having low thermal conductivity. Therefore, for products requiring heat dissipation at present, a design in which the thickness of the entire lead frame is uniformly thickened is pursued. [0003] Also, for example, Patent Document 1 discloses a module in which only power chips are mounted, i...

Claims

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Application Information

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IPC IPC(8): H01L23/495H01L25/07
CPCH01L23/49541H01L23/49575H01L25/072H01L23/49513H01L23/49548H01L23/49565H01L23/49568H01L23/49586H01L2224/48091H01L2224/48137H01L25/18H01L2924/00014
Inventor 柴田祥吾中川信也山口公辅
Owner MITSUBISHI ELECTRIC CORP
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