A kind of touch screen switch, touch screen and manufacturing method of touch screen switch

Abstract

The invention provides a touch screen switch, which includes a glass substrate, a buffer layer, a grid insulating layer and a second metal layer, and also includes a flat organic layer coated on the second metal layer and having a hollow groove; The first dielectric layer on the inner surface and bottom of the groove; the third metal layer above the first dielectric layer with one side outside the hollow groove and the other side extending into the hollow groove; covering the first dielectric layer and the third metal layer The second dielectric layer, and two first through holes that penetrate the upper and lower surfaces of the second and first dielectric layers and are away from the third metal layer are etched on the area corresponding to the hollow groove, and two first through holes that penetrate the upper and lower surfaces of the second dielectric layer and are located Two second through holes above the third metal layer; bottom indium tin oxide covering the top of the second dielectric layer, the inner surfaces and bottoms of the two first through holes, and the inner surfaces and bottoms of the two second through holes. The implementation of the present invention not only does not compress the design, but also satisfies the process window, reduces the rework rate and improves the output.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a touch screen switch, a touch screen and a manufacturing method of the touch screen switch. Background technique [0002] The embedded touch screen ITP (In Cell Touch Panel) integrates the touch function into the liquid crystal display, and achieves the sensing purpose by detecting the light intensity changes on the panel surface during the touch process. It has the advantages of thinner and lighter and more convenient application. [0003] Such as figure 1 As shown, the touch screen switch on the existing ITP product realizes the connection between the third metal layer M3 (Metal3) and the second metal layer by etching four small holes on the first dielectric layer TL1 (InsulatingLayer1) and the second dielectric layer IL2 (Insulating Layer2). Layer M2 (Metal 2) signal intercommunication; wherein, M3 spans the two small holes etched on IL2, M2 spans the other two small...

AI Technical Summary

Problems solved by technology

However, if figure 2 As shown, when the backoff value of M3 is designed at 0.6um, M3 is connected to the four small holes, so that BITO cannot be connected to M2, resulting in the inability of the signals of M3 and M2 to communicate with each other. Therefore, it is necessary to increase the backoff value of M3 to 0.9 um (such as figure 1 shown) to ensure that the design can be within the range of process capability, which not only compresses the design, but also compresses the process window

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