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Preparation method of Al-doped graded structure tin disulfide gas sensitive material

A gas-sensing material, tin disulfide technology, applied in analytical materials, chemical instruments and methods, material resistance, etc., can solve the problem that the sensor cannot work at room temperature, and achieve the effect of improving sensitivity

Active Publication Date: 2018-02-13
黑龙江省工研院资产经营管理有限公司
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Problems solved by technology

[0004] The present invention is to solve the existing problems based on inorganic two-dimensional layered SnS 2 NO of nanomaterials 2 The problem that the sensor cannot work at room temperature, and a method for preparing an Al-doped hierarchical structure tin disulfide gas-sensitive material is provided

Method used

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  • Preparation method of Al-doped graded structure tin disulfide gas sensitive material
  • Preparation method of Al-doped graded structure tin disulfide gas sensitive material
  • Preparation method of Al-doped graded structure tin disulfide gas sensitive material

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specific Embodiment approach 1

[0017] Specific embodiment one: the preparation method of a kind of Al-doped hierarchical structure tin disulfide gas sensitive material of this embodiment is carried out according to the following steps:

[0018] 1. Add tin tetrachloride pentahydrate into the ethylene glycol solution under the condition of electromagnetic stirring. After the tin tetrachloride pentahydrate dissolves, a mixed solution is obtained. Add thiourea and nine Aluminum nitrate hydrate, magnetically stirred for 10min to 40min to obtain a reaction solution; the molar ratio of tin tetrachloride pentahydrate, thiourea and aluminum nitrate nonahydrate is 1:(1.5~4):(0.01~0.05), the The concentration of tin tetrachloride pentahydrate in the mixed solution is 0.03~0.6mol / L;

[0019] 2. Put the reaction solution obtained in step 1 into a microwave tube, react at a temperature of 170°C to 190°C for 10min to 30min, and then centrifuge. The centrifuged product is first washed with ethanol for 3 to 5 times, and the...

specific Embodiment approach 2

[0020] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the molar ratio of tin tetrachloride pentahydrate, thiourea and aluminum nitrate nonahydrate described in step 1 is 1:2:0.03. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0021] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the molar ratio of tin tetrachloride pentahydrate, thiourea and aluminum nitrate nonahydrate described in step one is 1:2:0.05. Other steps and parameters are the same as those in Embodiment 1 or 2.

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Abstract

The invention provides a preparation method of an Al-doped graded structure tin disulfide gas sensitive material, belongs to the field of a gas sensitive material, particularly relates to a preparation method of an Al-doped flower-shaped graded structure SnS2 gas sensitive material, and aims to solve the problem that the existing NO2 sensor based on an in organic two-dimensional layered SnS2 nanometer material cannot work at room temperature. The method is as follows: the Al-doped flower-shaped graded structure SnS2 is synthesized by taking tin chloride pentahydrate as a tin source, thiourea as a sulfur source, aluminum nitrate nonahydrate as an aluminum source and glycol as a solvent and by a one-step microwave heating method. The gas sensitive sensor is prepared by the Al-doped flower-shaped graded structure SnS2. The gas sensitive sensor can detect the NO2 with the ppb concentration grade at room temperature, is high in sensitivity, safe and portable, and has wide application prospect.

Description

technical field [0001] The invention belongs to the field of gas-sensing materials, and in particular relates to a preparation method of an Al-doped hierarchical structure tin disulfide gas-sensing material. Background technique [0002] Nitrogen dioxide (NO 2 ) is a common toxic and harmful gas produced in the process of industrial fuel combustion and motor vehicle exhaust emissions. It is one of the main causes of acid rain and photochemical smog. In addition to polluting the environment, it also threatens human health. When the concentration exceeds 1ppm, it will cause respiratory diseases and cause serious damage to the respiratory system. Therefore, NO in various environmental conditions 2 Real-time online monitoring is of great significance. Among various types of gas sensors, semiconductor sensors have attracted much attention because of their advantages such as low cost, simple method, small device size, and integration. The core component of semiconductor gas sen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00G01N27/12
CPCC01G19/00C01P2002/72C01P2004/03C01P2004/04C01P2006/40G01N27/125
Inventor 郝娟媛张一健孙权郑晟良王铀
Owner 黑龙江省工研院资产经营管理有限公司
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