Semiconductor wafer temperature control method

A temperature control method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as lack of quantitative considerations, achieve the effects of increasing production capacity, shortening cooling time, and saving nitrogen resources

Inactive Publication Date: 2018-03-09
合肥新汇成微电子股份有限公司
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a cooling method lacks quantitative consideration of the required cooling time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0015] Embodiment A kind of temperature control method of semiconductor wafer, cooling the semiconductor wafer covered by resin sheet or adhesive tape is characterized in that, comprises the following steps:

[0016] (1) In the cooling stage of the semiconductor wafer, according to the different types of processes, the temperature is lowered to a temperature range of different heights and stabilized; The gas flow for cooling the area is controlled in a range of different heights, and at the same time, the fan is turned on and the wind speed is adjusted to form a stable laminar air flow in the loading area for purging and cooling the wafer;

[0017] (2) Maintain the gas flow rate and fan wind speed for blowing and cooling introduced in the above steps, and continue cooling the wafer for 5-10 minutes in the loading area;

[0018] (3) When the cooling time in step (2) arrives, and the cooling state of the detected wafer satisfies the chip picking condition, start chip picking.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor wafer temperature control method used for cooling a semiconductor wafer covered by a resin sheet or an adhesive tape; the method comprises the following steps:1, dropping the temperature to high-low different temperature zones and stabilizing the temperature according to different process types in a semiconductor wafer cooling phase, and controlling the cooling air flow into high-low different ranges according to different oxygen content requirements by different process types, wherein the cooling air is led to the wafer bearing area; simultaneously opening a blower, regulating the air speed, forming a stable laminar flow airflow in the bearing area, thus blowing and cooling the wafer; 2, keeping the blowing cooling airflow and the blower air speedin said steps, and continue cooling the wafer for 5-10 min in the bearing area; 3, when the cooling time in step 2 has arrived, detecting the wafer cooling state to satisfy with the wafer removal conditions, and start removing the wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafers, in particular to a temperature control method for semiconductor wafers. Background technique [0002] With the development of semiconductor integrated circuit manufacturing technology, the feature size is continuously reduced, which makes the integration of chips higher and higher, and puts forward higher requirements for integrated circuit manufacturing and process equipment. The latest process development is increasingly subject to process equipment. restrict. In terms of vertical furnace equipment, in order to ensure the realization of the above process and material properties, the heat treatment process puts forward higher requirements for the indicators of vertical furnace equipment, such as particle control, oxygen content control, heating and cooling rate, stability, etc. . In addition, on the premise of satisfying the process performance, the issue of production capacity ne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324
CPCH01L21/324
Inventor 江富杰张飞凡
Owner 合肥新汇成微电子股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap