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Pixel circuit and method of operation thereof

A kind of circuit and pixel technology, which is used in TV, electrical components, image communication, etc., and can solve problems such as high power consumption

Active Publication Date: 2020-11-06
STMICROELECTRONICS (RES & DEV) LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such photodiode pixels can exhibit high power consumption due to the use of capacitors and generate kTC noise associated with capacitors and random telegraph signal (RTS) noise associated with source followers
As such, photodiode pixels of CMOS image sensors are ineffective for certain applications or environments where at least one of a low power mode of operation or a low noise floor is desired (e.g., low light conditions)

Method used

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  • Pixel circuit and method of operation thereof
  • Pixel circuit and method of operation thereof
  • Pixel circuit and method of operation thereof

Examples

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Embodiment Construction

[0014] The making and using of various embodiments are discussed in detail below. It should be understood, however, that the various embodiments described herein may be applied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use each embodiment and should not be construed in a limiting sense.

[0015] Desirable features of many electronic instruments include high signal-to-noise ratio (SNR) and simplified or reduced circuitry, the latter of which can reduce the cost of the instrument and provide simpler engineering. Electronic noise reduction techniques can improve signal resolution and can allow more sensitive measurements, both of which can benefit many instrumentation applications.

[0016] Embodiments described herein provide pixel circuits and methods of operation thereof. This circuit provides a low noise signal readout and can be used in situations where motion blur is the dominant motion ...

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Abstract

An embodiment circuit includes: a first source follower configured to be controlled by a voltage at a first node; a photodiode controllably coupled to the first node; and a bias transistor configured to be controlled by a bias voltage. The bias transistor has a first terminal coupled to the output of the first source follower. The circuit additionally includes: a storage node controllably coupled to the output of the first source follower; and an amplifier controllably coupled between the storage node and an output line. Also included in the circuit is a controllable switching element configured to couple the second terminal of the bias transistor to a supply voltage in response to the pixel operating in the first mode, and in response to the pixel operating in the A second mode couples the second terminal of the bias transistor to the output line.

Description

technical field [0001] The present disclosure relates generally to electronic circuits and, in particular embodiments, to a pixel circuit and method of operation thereof. Background technique [0002] Image sensors using photodiode pixels can be implemented in a complementary metal oxide semiconductor (CMOS) architecture. Each photodiode pixel of a CMOS image sensor may include an image sensitive element and associated image processing circuitry may be implemented in a single chip. Each photodiode pixel may also include a plurality of capacitors and at least one source follower, which may act as an amplifier. Such photodiode pixels can exhibit high power consumption due to the use of capacitors and generate kTC noise associated with capacitors and random telegraph signal (RTS) noise associated with source followers. As such, photodiode pixels of CMOS image sensors are ineffective for certain applications or environments (eg, low light conditions) where at least one of a lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H01L27/146
CPCH01L27/14643H04N25/76H04N25/78H01L27/14612H04N25/531H04N25/616H04N25/65H04N25/771H04N25/77H04N25/75
Inventor L·斯塔克
Owner STMICROELECTRONICS (RES & DEV) LTD
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