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A high dynamic range image sensor structure and its driving method

An image sensor and high dynamic range technology, applied in the field of image sensors, can solve problems such as prolonged exposure time, increased difficulty in circuit design, and longer sensor shooting time

Active Publication Date: 2021-06-15
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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Problems solved by technology

In order to achieve a high dynamic range in the prior art, the two methods usually used are multiple correlation sampling and multi-frame exposure, but multiple correlation sampling will affect the frame rate of the sensor, making circuit design more difficult; and multi-frame exposure will Makes the exposure time longer and the sensor shooting time longer

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  • A high dynamic range image sensor structure and its driving method
  • A high dynamic range image sensor structure and its driving method

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Embodiment Construction

[0024] In order to make the purpose, technical solution and advantages of the present invention clearer, the specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0025] Such as figure 1 As shown, the present invention provides a high dynamic range image sensor structure, including a photoelectric signal generating unit 1, a signal reset holding unit 2 and a signal output unit 3, an output end of the photoelectric signal generating unit and an input end of the signal reset holding unit The output end of the signal reset holding unit is connected to the input end of the signal output unit, and the signal reset holding unit is used to reset the circuit, store the charge generated by the photodiode and transmit the electrical signal.

[0026] The photoelectric signal generating unit 1 includes a photodiode PD and a photoelectric switch MOS transistor M1, wherein the anode of the photodio...

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Abstract

The invention discloses a high dynamic range image sensor structure and its driving method. The high dynamic range image sensor structure includes a photoelectric signal generation unit, a signal reset and hold unit, and a signal output unit. The output of the photoelectric signal generation unit is The end is connected to the input end of the signal reset holding unit, and the output end of the signal reset holding unit is connected to the input end of the signal output unit. In the high dynamic range image sensor structure and its driving method disclosed in the present invention, the charge generated by the photodiode is stored in two places in the signal reset and holding unit, so that the dynamic range of the image sensor is increased.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to a high dynamic range image sensor structure and a driving method thereof. Background technique [0002] With the continuous development of image sensor technology, CMOS image sensors are more and more widely used in electronics, monitoring, navigation, transportation and other fields due to their advantages of high integration and low power consumption. However, with the continuous development of CMOS image sensor technology, the requirements for the performance of the CMOS image sensor are also getting higher and higher. [0003] High dynamic range is an important index to measure the performance of CMOS image sensor. The larger the dynamic range, the higher the image quality. To achieve excellent image quality in both light and low light, the researchers used every possible technique to increase the dynamic range of the image sensor pixels. In order to achieve a high dynamic rang...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H01L27/146
CPCH01L27/14612H04N25/76
Inventor 曾夕董林妹李琛袁庆何学红
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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