Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Purification device and purification method for high-purity indium

A high-purity, horizontal technology, applied in the direction of process efficiency improvement, etc., can solve the problems of low production capacity, high cost, poor controllability, etc., and achieve the effect of high production capacity, easy control and short purification cycle

Active Publication Date: 2018-03-30
清远先导材料有限公司
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the vacuum distillation method has limited purification capacity, up to 5N, and high energy consumption; the zone smelting method has the disadvantages of long purification cycle, high energy consumption, and low production capacity; the ion exchange method has a purification capacity of up to 5N, and the process is complex , low efficiency, not suitable for industrial production; the low-halogen compound method has complicated process, poor controllability, and high cost; while the electrolysis method is most commonly used because of its short process flow and easy industrialization. At present, 4N indium in China basically uses electrolysis However, the electrolysis method involves the selection of electrolyte, cathode material and electrolytic cell, the process control is complicated, and the pollution is large. More importantly, the highest purity is 5N after multiple point solution and other special processes, which cannot meet the requirements of 6N~7N ultra-high purity. Production of High Purity Indium

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Purification device and purification method for high-purity indium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] (1) Put the high-purity graphite boat containing 5N indium raw material into the quartz tube, and its front end (left end) is flush with the right end of the third resistance heater. The temperature of the first resistance heater, the second resistance heater and the third resistance heater is set to 150°C, the temperature of the cooling circulating water is 30°C to 40°C, the temperature of the other resistance heaters is set to 250°C, and the high-purity graphite boat After melting the 5N indium raw material, keep the temperature for 2 hours, open the guide rail, move the guide rail at a speed of 10mm / h, and perform directional solidification once to the rear end (right end) of the high-purity graphite boat to obtain the indium to be smelted;

[0062] (2) Set the temperature of the fourth resistance heater, the fifth resistance heater, the sixth resistance heater, the seventh resistance heater, the eighth resistance heater and the ninth resistance heater to 150°C, and w...

Embodiment 2

[0064] (1) Put the high-purity graphite boat containing 5N indium raw material into the quartz tube, and its front end (left end) is flush with the right end of the third resistance heater. The temperature of the first resistance heater, the second resistance heater and the third resistance heater is set to 150°C, the temperature of the cooling circulating water is 30°C to 40°C, the temperature of the other resistance heaters is set to 250°C, and the high-purity graphite boat After melting the 5N indium raw material, keep the temperature for 2 hours, open the guide rail, move the guide rail at a speed of 10mm / h, and perform directional solidification once to the rear end (right end) of the high-purity graphite boat to obtain the indium to be smelted;

[0065] (2) Set the temperature of the fourth resistance heater, the fifth resistance heater, the sixth resistance heater, the seventh resistance heater, the eighth resistance heater and the ninth resistance heater to 150°C, and w...

Embodiment 3

[0067] (1) Put the high-purity graphite boat containing 5N indium raw material into the quartz tube, and its front end (left end) is flush with the right end of the third resistance heater. After the air in the quartz tube is exhausted, high-purity hydrogen is introduced, and the first The temperature of the first resistance heater, the second resistance heater and the third resistance heater is set to 150°C, the temperature of the cooling circulating water is 30°C to 40°C, and the temperature of the other resistance heaters is set to 250°C. After the 5N indium raw material is melted, keep the temperature for 2 hours, open the guide rail, move the guide rail at a speed of 10mm / h, and perform directional solidification once to the rear end (right end) of the high-purity graphite boat to obtain the indium to be smelted;

[0068] (2) Set the temperature of the fourth resistance heater, the fifth resistance heater, the sixth resistance heater, the seventh resistance heater, the eig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
lengthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a purification device for high-purity indium. The purification device comprises a quartz tube, a plurality of resistance heaters and a guide rail. Two ends of the quartz tube are fixed along the horizontal directions by the aid of a left flange sleeve and a right flange sleeve, and a graphite boat is arranged in the quartz tube; the resistance heaters are arranged on the outer side of the quartz tube and are sequentially arranged along the horizontal directions of the quartz tube, and cooling devices are arranged between the adjacent resistance heaters; the resistance heaters are fixed by the aid of the guide rail, and the guide rail is provided with a left stopper, a slide wire groove and a right stopper. Compared with the prior art, the purification device for thehigh-purity indium has the advantages that the resistance heaters are sequentially arranged on the outer side of the quartz tube along the horizontal directions, and accordingly zone melting and directional solidification can be simultaneously implemented; the temperatures of the resistance heaters are controlled, multistage heating can be implemented, uniform heating temperature gradient distribution and stable temperature fields can be guaranteed, accordingly, integral purification procedures are high in efficiency, and 6N-7N ultrahigh-purity indium production requirements can be met.

Description

technical field [0001] The invention relates to the technical field of purification of scattered metal materials, and more specifically relates to a high-purity indium purification device and method. Background technique [0002] Indium (In) has excellent physical and chemical properties, and is widely used in high-tech fields such as electronics, energy, optoelectronics, national defense, modern information industry, aerospace, etc., and its role in the national economy is becoming increasingly important. The improvement of the purity of indium can enhance its chemical, electrical, optical magnetic, and mechanical properties. With the development of high-tech industries in the fields of optoelectronics, aerospace, and atomic energy, the requirements for the purity of high-purity indium are also getting higher and higher. Ultra-high-purity indium is an important raw material for preparing indium phosphide semiconductors, and indium phosphide crystals have important applicati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22B9/02C22B58/00
CPCC22B9/02C22B58/00Y02P10/20
Inventor 何志达谭继军朱刘
Owner 清远先导材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products