Pressure sensor and preparation method thereof
A pressure sensor and sensitive layer technology, applied in the sensor field, can solve the problems of high cost and complex pressure sensor preparation process, and achieve the effects of reducing the preparation cost, simple structure and simplifying the preparation process
Active Publication Date: 2020-04-14
SHENZHEN INST OF ADVANCED TECH
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- Claims
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Problems solved by technology
[0004] Existing pressure sensors based on thin-film transistors are difficult to achieve a large measurement range while having high sensitivity. However, the preparation process of a pressure sensor with high sensitivity and a large measurement range is complicated and the cost is too high
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[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses.
[0031] refer to figure 1 , the pressure sensor provided in this embodiment is a resistive pressure sensor, which includes a thin film transistor 1 and a sensitive layer 2 disposed on the thin film transistor 1 . The thin film transistor 1 comprises a semiconductor layer and a metal electrode, the metal electrode comprises a gate 11 arranged at the top of the semiconductor layer, the sensitive layer 2 comprises an upper sensi...
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Abstract
The invention provides a pressure sensor and a preparation method thereof. The pressure sensor includes a thin film transistor and a sensitive layer disposed on the thin film transistor; the thin filmtransistor includes a semiconductor layer and a metal electrode; the metal electrode includes a gate disposed on the top of the semiconductor layer; the sensitive layer comprises an upper sensitive layer; the lower surface of the upper sensitive layer is provided with a microstructure array; the microstructure array comprises a plurality of arrayed microstructures; and the sensitive layer furthercomprises a first conductive layer which covers the surface of the microstructure array and is electrically connected with the gate. The pressure sensor provided by the present invention includes thethin film transistor and the sensitive layer; the sensitive layer includes the upper sensitive layer provided with the microstructure array and the first conductive layer covering the surface of themicrostructure array; since the microstructure array is arranged on the sensitive layer, the pressure sensor has high sensitivity and a large measurement range; and the pressure sensor is simple in structure, and therefore, the preparation process of the pressure sensor can be simplified, and the preparation costs of the pressure sensor can be reduced.
Description
technical field [0001] The invention relates to the technical field of sensors, in particular to a pressure sensor and a preparation method thereof. Background technique [0002] With the rapid development of science and technology, human beings have higher and higher requirements for pressure sensors. Features such as high sensitivity, large measurement range, and flexibility have become the development trend of pressure sensors in the future. Among them, how to make pressure sensors with high sensitivity and The large measurement range becomes a difficult problem in the research of this field. [0003] Traditional pressure sensors mainly include piezoresistive, inductive, and capacitive types. The resistance, inductance, and capacitance of the main component structure of the device change under the action of external pressure, and then the measurement circuit is used to measure the changes of these three physical quantities. After a series of processing, the purpose of de...
Claims
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IPC IPC(8): G01L1/22B32B9/00B32B9/04B32B33/00
CPCB32B9/00B32B9/04B32B33/00B32B2255/20B32B2255/205G01L1/2293
Inventor 李昆李文杰冯叶钟国华童君隋帆杨春雷
Owner SHENZHEN INST OF ADVANCED TECH