Ultraviolet LED and preparation method

Abstract

The invention relates to an ultraviolet light emitting diode and a preparation method. The device comprises a light-emitting layer, a P-type layer located on one side of the light-emitting layer, and an N-type layer located on the other side of the light-emitting layer. A plurality of through holes are spaced apart from the P-type layer, and each through hole extends from the P-type layer to the The light-emitting layer is penetrated below, and N electrodes are arranged in each of the through holes. One end of the N electrode extends out of the P-type layer to form an N-terminal electrode, and the other end is electrically connected to the N-type layer. The outer peripheral surface of the N-electrode is covered with a first The insulating layer, the first insulating layer insulates the N electrode from the P-type layer and the light-emitting layer respectively. Since the N electrode is arranged in the through hole, the N-terminal electrode and the electrode end of the P-type layer are located on the same side, which is convenient for wiring and light transmission, and because the first insulating layer and the reflective N-electrode exist, the light of the light-emitting layer is absorbed by the N Electrode reflection realizes maximum in-plane light scattering and improves light extraction efficiency.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an ultraviolet light-emitting diode and a preparation method. Background technique [0002] Optoelectronic semiconductor devices play an increasingly important role in our life and scientific research. In recent years, nitride semiconductor light-emitting diodes (LEDs) based on gallium nitride (GaN) have been used more and more in practice, and deep ultraviolet C-band (UVC) LEDs have also been used as excitation Light source to realize special light source. As for the research and application of LED, people pay most attention to the internal quantum efficiency and external quantum efficiency of LED. Although the current internal quantum efficiency of UVC-based LEDs has reached 60%, since UVC uses AlGaN materials with high Al composition (such as figure 1 ), affected by optical polarization, only no more than 12% of the light can exit the LED and enter the air. T...

AI Technical Summary

Problems solved by technology

Judging from the current research situation, using various nanotechnology to change the roughness of the GaN surface is a common method to improve the light extraction efficiency of the GaN surface, but the existing methods require relatively complicated operation procedures and technical equipment, which belongs to the surface light propagation. Light scattering, and

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