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Methods for making an X-ray detector

An X-ray and X-ray technology, which is applied in the field of making semiconductor X-ray detectors, can solve the problems of difficult and impossible production of detectors with large areas and a large number of pixels.

Active Publication Date: 2018-04-17
SHENZHEN XPECTVISION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cumbersome thermal management required in existing semiconductor X-ray detectors (e.g., Medipix) can make detectors with large areas and large numbers of pixels difficult or impossible to produce

Method used

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  • Methods for making an X-ray detector
  • Methods for making an X-ray detector
  • Methods for making an X-ray detector

Examples

Experimental program
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Embodiment Construction

[0069] Figure 1A A semiconductor X-ray detector 100 according to an embodiment is schematically shown. The semiconductor X-ray detector 100 may include an X-ray absorbing layer 110 and an electronic layer 120 (for example, an ASIC) for processing or analyzing electrical signals generated in the X-ray absorbing layer 110 by incident X-rays. In an embodiment, the semiconductor X-ray detector 100 does not include a scintillator. The X-ray absorbing layer 110 may include semiconductor materials such as silicon, germanium, GaAs, CdTe, CdZnTe or combinations thereof. Semiconductors can have high mass attenuation coefficients for x-ray energies of interest.

[0070] as in Figure 1B As shown in the detailed cross-sectional view of the detector 100, according to an embodiment, the X-ray absorbing layer 110 may include one or more discrete regions 114 formed from the first doped region 111 and the second doped region 113 One or more diodes (for example, p-i-n or p-n). The second d...

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Abstract

An apparatus suitable for detecting X-ray, the apparatus comprising: a first substrate (122) comprising a plurality of first electric contacts (125); a first chip layer (110) comprising a plurality offirst chips (189), wherein each of the first chips (189) comprises a first electrode and is bonded to the first substrate(122) such that the first electrode is electrically connected to at least oneof the first electrical contacts (125); a second substrate(122) comprising a plurality of second electric contacts (125); and a second chip layer(110) comprising a plurality of second chips (189), wherein each of the second chips (189) comprises a second electrode and is bonded to the second substrate (122) such that the second electrode is electrically connected to at least one of the second electrical contacts (125), wherein the first chip layer (110) and the second chip layer (110) are bonded to each other such that at least two second chips (189) are bonded to a same first chip (189).

Description

【Technical field】 [0001] The present disclosure relates to X-ray detectors, and more particularly to methods for fabricating semiconductor X-ray detectors. 【Background technique】 [0002] An X-ray detector may be a device for measuring the flux, spatial distribution, spectral or other properties of X-rays. [0003] X-ray detectors are used in many applications. An important application is imaging. X-ray imaging is a radiographic technique and can be used to reveal the internal structure of inhomogeneously composed and opaque objects such as the human body. [0004] Early X-ray detectors used for imaging included photographic negatives and photographic film. The photographic negative can be a glass negative with an emulsion coating. Although photographic negatives have been replaced by photographic films, they are still used in special cases due to the superior qualities they offer and their extreme stability. A photographic film can be a plastic film (eg, a tape or shee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/24
CPCH01L27/14609H01L27/14634H01L27/14658H01L27/14661H01L27/14676G01T1/24
Inventor 曹培炎刘雨润
Owner SHENZHEN XPECTVISION TECH CO LTD
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