Method for preparing free layer of magnetic tunnel junction and method for preparing magnetic tunnel junction

A magnetic tunnel junction, free technology, applied in the manufacture/processing of electromagnetic devices, etc., can solve the problem of poor surface characteristics of the free layer, and achieve the effect of improving the TMR value, improving the surface characteristics, and improving the overall performance.

Active Publication Date: 2021-07-13
CETHIK GRP +1
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Problems solved by technology

[0006] The main purpose of the present invention is to provide a method for preparing a free layer of a magnetic tunnel junction and a method for preparing a magnetic tunnel junction, so as to solve the problem of poor surface properties of the free layer using plasma treatment in the prior art

Method used

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  • Method for preparing free layer of magnetic tunnel junction and method for preparing magnetic tunnel junction
  • Method for preparing free layer of magnetic tunnel junction and method for preparing magnetic tunnel junction
  • Method for preparing free layer of magnetic tunnel junction and method for preparing magnetic tunnel junction

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preparation example Construction

[0053] In preferred embodiment A, such as figure 2 As shown, the above-mentioned thin film includes a ferromagnetic free layer 40', and the corresponding preparation method is as follows image 3 As shown, it includes: depositing a ferromagnetic free layer 40'; performing a first plasma treatment on the ferromagnetic free layer 40'; performing a first annealing treatment on the ferromagnetic free layer 40' after the first plasma treatment.

[0054] The material forming the ferromagnetic free layer 40' in the above embodiment A can be selected from Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, CoFeNi, CoFeB, NiFeB, CoNiB, CoFeNiB, FePt, FePd, One or more combinations of CoPt, CoPd, CoFePt, CoFePd, FePtPd, CoPtPd, CoFePtPd. Preferably, its thickness is 0.4 nm to 3 nm. The plasma in the above-mentioned first plasma treatment can be composed of Ar, Kr, Xe, He, N 2 、H 2 , or O 2 One or more of these gases are formed. The etching rate of the first plasma treatment is very low,...

Embodiment approach 1

[0059] Embodiment 1: Deposit the first ferromagnetic free layer 41; perform the first plasma treatment on the first ferromagnetic free layer 41, and perform the first annealing on the first ferromagnetic free layer 41 after the first plasma treatment Processing: depositing a nonmagnetic metal insertion layer 42 on the first ferromagnetic free layer 41 after the first annealing treatment; depositing a second ferromagnetic free layer 43 on the nonmagnetic metal insertion layer 42 .

Embodiment approach 2

[0060] Embodiment 2: Deposit the first layer of ferromagnetic free layer 41; deposit the non-magnetic metal insertion layer 42 on the first layer of ferromagnetic free layer 41; perform the first plasma treatment on the non-magnetic metal insertion layer 42, and treat the first plasma The nonmagnetic metal insertion layer 42 after the bulk treatment is subjected to the first annealing treatment; the second ferromagnetic free layer 43 is deposited on the nonmagnetic metal insertion layer 42 after the first annealing treatment.

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Abstract

The invention provides a method for preparing a free layer of a magnetic tunnel junction and a method for preparing the magnetic tunnel junction. The preparation method of the free layer of the magnetic tunnel junction includes adopting a deposition process to set each film layer of the free layer, using the first plasma to treat one or more layers of each film layer, and treating each film after the first plasma treatment One or more of the layers are subjected to a first annealing treatment. Use the first annealing treatment to perform in-situ heat treatment on one or more film layers after the first plasma treatment, thereby reducing or eliminating damage or defects that may be caused by the first plasma treatment, improving the surface characteristics of the free layer, and further improving The overall performance of the magnetic tunnel junction with the free layer, for example, increases the TMR value of the magnetic tunnel junction and reduces its RA value.

Description

technical field [0001] The present invention relates to the field of magnetic random access memory (spin transfer torque magnetic random access memory, STT-MRAM), in particular to a method for preparing a free layer of a magnetic tunnel junction and a method for preparing the magnetic tunnel junction. Background technique [0002] STT-MRAM is a potential and revolutionary general-purpose storage technology, which can directly use spin-polarized current to drive the magnetic moment reversal of nanomagnets to complete information writing. It integrates the high storage density of DRAM, the fast read and write capability of SRAM, the non-volatility, low power consumption and high stability of Flash. In addition, it has the advantage of unlimited use; compared with traditional MRAM, It has better scalability, lower write information current, especially, it is compatible with more advanced semiconductor process. [0003] It mainly includes a free layer 40, a reference layer 20 a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12
CPCH10N50/01
Inventor 刘鲁萍简红蒋信
Owner CETHIK GRP
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