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Metal Growth Process

A metal and process technology, which is applied in the field of metal growth process, can solve problems such as increased device resistance, large film stress, and increased resistivity of metal tungsten film, so as to achieve the effect of reducing bending, resistivity and stress

Active Publication Date: 2020-01-31
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When tungsten grows, fluorine is easy to accumulate in the grain boundaries of metal tungsten grains and cannot escape, which will increase the resistivity of the entire metal tungsten film, and the film will also have a lot of stress when grown at low temperature
[0005] The high resistivity of the metal tungsten grid will directly lead to an increase in the resistance of the entire device, and the high stress of the metal tungsten grid will also affect the subsequent photolithography process

Method used

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  • Metal Growth Process
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Embodiment Construction

[0019] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0020] Such as figure 1 As shown, a metal growth process includes the following steps: placing a substrate in a furnace tube; heating the substrate to a deposition temperature; feeding a gaseous metal initial compound and an auxiliary gas into the furnace tube to deposit a metal film on the substrate; High-temperature annealing of the metal film is realized by performing high-temperature annealing on the furnace tube.

[0021] The...

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Abstract

The invention relates to a metal growth process, which comprises the steps of putting a base body into a furnace tube; heating the base body to a deposition temperature; delivering gaseous tungsten hexafluoride and hydrogen into the furnace tube, and depositing a tungsten film on the base body; and achieving high temperature annealing for the tungsten film through performing high temperature annealing on the furnace tube. According to the invention, the step of high temperature annealing is added in the metal tungsten growth process, so that the resistivity and stress of the tungsten formed bydeposition are reduced, and the resistance of the whole device and the bending of a wafer are further reduced. In addition, for other metal structures in a three-dimensional memory, the innovative annealing process has importance guidance significance for the preparation of the other structures.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a metal growth technology. Background technique [0002] With the continuous development of semiconductor technology, the current memory manufacturing technology has gradually transitioned from a simple planar structure to a more complex three-dimensional structure. The technology research and development of three-dimensional memory is one of the mainstreams of international research and development. [0003] With the development of memory technology from two-dimensional to three-dimensional, the requirements for the process are becoming more and more stringent. At the same time, the growth method of metal tungsten as the gate material has gradually developed from physical vapor deposition to chemical vapor deposition. In general, the so-called chemical vapor deposition is to form a solid substance deposited on the substrate through the gas phase chemical re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/285
CPCH01L21/28556
Inventor 许爱春李远彭浩左明光詹侃唐浩万先进郁赛华
Owner YANGTZE MEMORY TECH CO LTD