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Semiconductor Laser Diode Having Multi-Quantum Well Structure

一种激光二极管、半导体的技术，应用在半导体激光器、有源区的结构、激光器等方向，能够解决光栅异常生长、不能补偿光栅不连续性等问题

Active Publication Date: 2018-05-08
SUMITOMO ELECTRIC DEVICE INNOVATIONS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the well and barrier layers show a large lattice mismatch, the epitaxial growth of these layers becomes unable to compensate for the grating discontinuities, which can lead to abnormal growth at the edges of the individual corrugations of the grating

Method used

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  • Semiconductor Laser Diode Having Multi-Quantum Well Structure
  • Semiconductor Laser Diode Having Multi-Quantum Well Structure
  • Semiconductor Laser Diode Having Multi-Quantum Well Structure

Examples

Experimental program
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Effect test

no. 1 example

[0017] 1 shows a cross-sectional view of a semiconductor laser diode (LD) 1 viewed from the direction in which laser light propagates according to a first embodiment of the present invention; Figure 1B also shows LD 1 along the Figure 1A A section taken along the line IB-IB shown. The LD 1 of this embodiment provides an n-type InP substrate 2, an n-type InP lower cladding layer 3, an active layer 4, a p-type InP upper cladding layer 5, a p-type InP barrier layer 6, an n-type InP barrier layer 7. A p-type InP layer 8 , a contact layer 9 , a passivation film 10 , a p-type electrode 11 and an n-type electrode 12 .

[0018] The n-type InP lower cladding layer 3 , the active layer 4 and the p-type upper cladding layer 5 are stacked on the n-type InP substrate 2 in this order. These layers of n-type InP lower cladding layer 3 , active layer 4 , and p-type upper cladding layer 5 form a mesa having a height of, for example, 2.0 μm.

[0019] The n-type InP substrate 2 is doped with...

no. 2 example

[0032] Next, the process of forming LD will be described. First, if Figure 6A As shown, grating layer 30 is grown epitaxially on semiconductor wafer 16 . Then, if Figure 6B As shown, a photoresist pattern is formed on the grating layer 30 , with subsequent etching of the grating layer 30 using the photoresist pattern as an etch mask, the corrugations 14 may be formed in the grating layer 30 . Semiconductor wafer 16 operates as n-type InP substrate 2 in LD1.

[0033] Then, the corrugation 14 is buried with the n-type InP lower cladding layer 3 . The n-type InP lower cladding layer 3 can be doped with 1.0×10 18 cm -3 concentration of Si and has a thickness of, for example, about 0.5 μm. Thereafter, the process epitaxially grows active layer 4 on n-type lower cladding layer 3 . By metal-organic chemical vapor deposition (MOCVD) technique, using trimethylindium (TMI), which are respectively used as sources of indium (In), gallium (Ga), aluminum (Al), arsenic (As) and phos...

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Abstract

A semiconductor laser diode (LD) having an optical grating is disclosed. The LD includes a lower cladding layer that buries the optical grating, an active layer, and an upper cladding layer. The active layer has the multi-quantum well (MQW) structure of barrier layers and well layers alternately arranged to each other. The MQW structure further includes intermediate layers between the barrier layers and the well layers, and have lattice constant between that of the barrier layer and that of the well layer. The inter mediate layer has a thickness thinner than 1 nm.

Description

[0001] This application claims priority from Japanese Patent Application No. 2016-213567 filed on October 31, 2016, the contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to semiconductor laser diodes (LDs). Background technique [0003] Multiple quantum well (MQW) structures have been widely used in active layers of semiconductor laser diodes (LDs), semiconductor light modulators, and the like. US Patent No. 6,978,055B has disclosed an MQW structure with an intermediate layer between a well layer and a barrier layer. One type of LD implements a grating below the active layer with an MQW structure. When the well and barrier layers exhibit a large lattice mismatch, epitaxial growth of these layers becomes unable to compensate for grating discontinuities, which can lead to abnormal growth at the edges of individual corrugations of the grating. Contents of the invention [0004] One aspect of the present invention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34H01S5/343
CPCH01S5/34H01S5/3438H01S5/1231H01S5/2226H01S5/2275H01S5/305H01S5/3054H01S5/3406H01S5/3407H01S5/34306H01S5/0206H01S5/026H01S5/34313H01S5/34366
Inventor 小河直毅
Owner SUMITOMO ELECTRIC DEVICE INNOVATIONS