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Atmospheric pressure high-frequency cold plasma processing device

A technology of cold plasma and treatment device, applied in the field of plasma treatment device, can solve problems such as surface modification, and achieve the effect of solving uneven discharge

Inactive Publication Date: 2018-05-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the defects in the background technology, the present invention proposes a normal-pressure high-frequency cold plasma processing device suitable for ultrafine (nanoscale) powder materials, which solves the problem of surface modification problem

Method used

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  • Atmospheric pressure high-frequency cold plasma processing device
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  • Atmospheric pressure high-frequency cold plasma processing device

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Embodiment

[0026] Such as figure 2 As shown, it is a schematic structural diagram of the atmospheric pressure high frequency cold plasma treatment device provided by the present invention; it includes a fluidized bed feed unit (1), a plasma generation unit (2) and a middle expansion type material collection unit (3).

[0027] Such as figure 2 As shown in (1), the fluidized bed feeding unit includes a powder material chamber, an air distribution plate and a fluidized bed powder feeder, and the material carrier gas passes through the powder at a flow rate of 20-40L / h. The material chamber, and then pass through the air distribution plate (the air distribution plate is a general accessory of the fluidized bed, and its aperture can be selected according to the demand, specifically 1-2 mm.) to evenly disperse the fine particle powder in the carrier gas, and then Enter the plasma generation unit through the outlet of the fluidized bed powder feeder for plasmaization; wherein, the fluidized ...

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Abstract

The invention provides an atmospheric pressure high-frequency cold plasma processing device and relates to a plasma processing device. The atmospheric pressure high-frequency cold plasma processing device comprises a fluidized bed feeding unit, a plasma generating unit and a middle expansion type material collecting unit. In the plasma processing device of the present invention, the fluidized bedfeeding unit with a fluidized bed reactor structure is used as a conveying unit of materials, and the problem of uniformly conveying ultrafine powder to the plasma generating unit is solved. A conventional horizontal plasma reactor is changed into a vertical structure, the feeding and collection of the powder are facilitated, at the same time, an oblique airflow dispersion plate is arranged in theplasma generating unit such that a carrier gas mixed with a powder material is spirally rotated into a discharge region, and the problem of the non-uniform discharge of the gas carrying the powder inthe discharge region is effectively solved. The material collecting unit is set to be a middle expansion structure with a wide middle section and narrow upper and lower sections, the attachment and collection of the powder material are facilitated, and the problem that a large amount of powder goes into the air through the carrier gas is avoided.

Description

technical field [0001] The invention relates to a plasma processing device, in particular to a normal-pressure high-frequency cold plasma processing device. Background technique [0002] The surface modification treatment of materials refers to the physical and chemical reactions between the external substances of the material and the surface of the material under certain external conditions, so that the surface state of the material changes or new elements and new groups are generated on the surface of the material, and finally meet the requirements of practical application needs. Plasma is an ionized gas-like substance composed of positive and negative ions produced by ionizing atoms and atomic groups after partial electron deprivation. From a macroscopic point of view, it still maintains an electrically neutral state of equal positive and negative charges. The chemically active plasma-active ions formed by the dissociation of part of the gas in the plasma will interact w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/30
CPCH05H1/30
Inventor 向勇张晓晴
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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