AlGaN/GaN HEMT microwave power device small-signal intrinsic-parameter extraction method

Abstract

The invention discloses an AlGaN / GaN HEMT microwave power device small-signal intrinsic-parameter extraction method. The method includes: S1, adopting a finite-element thermal-simulation method to extract a relation expression of changing of GaN HEMT device nonlinear-thermal-resistance with device power consumption and size; S2, utilizing test data of S-parameters under a cold-state pinch-off biascondition to extract parasitic-parameter values of a GaN HEMT device under a normal temperature; S3, utilizing test data of device pulses I-V under different environment temperatures to extract a relation expression of changing of parasitic resistance R<s> and R<d> with the temperatures to obtain values of the R<s> and R<d> under different bias conditions; and S4, adopting the test data of the S-parameters under all the bias conditions to strip off parasitic parameters to obtain intrinsic-network Y-parameters, and calculating device small-signal equivalent-circuit intrinsic-parameter values.According to the method, the relation expression of changing of the parasitic-resistance R<s> and R<d> with the temperatures is introduced, and the extracted intrinsic-parameter values are enabled tobe more credible and more have physical meaning.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for extracting small signal intrinsic parameters of AlGaN / GaN HEMT microwave power devices. Background technique [0002] AlGaN / GaN high electron mobility transistor (GaN HEMT) has the advantages of very high two-dimensional electron gas (2-DEG) concentration, high saturation electron migration velocity and high breakdown voltage, which makes GaN HEMT devices have great potential in microwave power applications. The incomparable advantages of GaAs devices are the current research and application hotspots, and have broad application prospects in communication, radar, satellite and other fields. [0003] Transistor device model plays a vital role in circuit design and acts as a bridge between circuit design and process design. Accurate device models are becoming more and more important, which will not only improve the accuracy of circuit desig...

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the deficiencies of the prior art, provide a method for extracting the intrinsic parameters of small signals of AlGaN / GaN HEMT microwave power devices, and solve the problem that the extracted intrinsic parameters deviate from the actual physical meaning without considering the "thermal effect" in the prior art The problem

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