Charge compensation schottky semiconductor device

Abstract

The invention discloses a charge compensation schottky semiconductor device. A charge compensation semiconductor material is arranged in a drift layer between grooves, which can increase the reverse blocking characteristic of the device, reduces the peak electric field at the bottom parts of the grooves, and increases reliability. According to the invention, the device herein by arranging a MIS structure in the upper parts inside the grooves can reduce the surface electric field of a Schottky barrier junction under reverse bias and can reduce reverse leak current.

Description

technical field [0001] The invention mainly relates to a charge compensation Schottky semiconductor device. Background technique [0002] Power semiconductor rectifier devices are widely used in power management and high-frequency applications, especially Schottky semiconductor devices have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as poor reverse blocking characteristics and high on-resistance. [0003] A new structure has been proposed to improve the reverse blocking characteristics of Schottky. A new structure introduces P-type conductive material on the surface of Schottky devices, which improves the reverse blocking voltage and leakage current characteristics of the device, and also The introduction of minority carriers in the forward conduction of the device reduces the switching performance of ...

AI Technical Summary

Problems solved by technology

[0002] Power semiconductor rectifier devices are widely used in power management and high-frequency applications, especially Schottky semiconductor devices have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as poor reverse blocking characteristics and high on-resistance.

[0003] A new structure has been proposed to improve the reverse blocking characteristics of Schottky. A new structure introduces P-type conductive materials on the surface of Schottky devices, which improves the reverse blocking voltage and leakage current characteristics of the device, and also The introduction of minority carriers during the forward conduction of the device reduces the switching performance of the device; the second type of new structure introduces a trench MIS structure on the surface of the device, and introduces the surface potential into the inside of the device to increase the reverse blocking voltage drop of the device or reduce On-resistance, this method can not take into account the surface potential of the Schottky junction and the reverse blocking voltage drop well, this method sets the insulating material in the device, which affects the reliability of the device; the third type of new structure in the device Introduce P-type conductive materials to change the electric field in the drift region and increase the reverse blocking voltage of the device. Due to the need for multiple epitaxial manufacturing processes, the manufacturing process of the device is complicated and the manufacturing cost is greatly increased.

Images