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Ultraviolet LED chip, manufacturing method of ultraviolet LED chip and ultraviolet LED

A technology of LED chips and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of poor light efficiency and low brightness, and achieve the goals of improving light efficiency and brightness, enhancing light output efficiency and brightness, and enhancing heat dissipation effect Effect

Pending Publication Date: 2018-06-01
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, there is a light absorption phenomenon between the internal contact layer material and the epitaxial layer structure in the LED epitaxial wafer, which leads to the problems of poor light efficiency and low brightness.

Method used

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  • Ultraviolet LED chip, manufacturing method of ultraviolet LED chip and ultraviolet LED
  • Ultraviolet LED chip, manufacturing method of ultraviolet LED chip and ultraviolet LED

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Embodiment Construction

[0034] The core idea of ​​the present invention is to provide an ultraviolet LED chip, a manufacturing method of the ultraviolet LED chip and an ultraviolet LED, which can enhance the light extraction efficiency and brightness of the ultraviolet LED and enhance the heat dissipation effect.

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] The first ultraviolet LED chip provided by the embodiment of the present application is as follows: figure 1 as shown, figure 1 The schematic diagram of the first ...

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Abstract

The invention discloses an ultraviolet LED chip. The ultraviolet LED chip is provided with an ultraviolet LED epitaxial layer in a form of tilted nanocolumn arrays which are tapered from bottom to bottom, the epitaxial layer in the form comprises tilted air gaps and the adjacent tilted nanocolumn arrays are connected through air, so that the light extraction efficiency and the brightness of an ultraviolet LED can be strengthened by using the Fresnel scattering effect between two interfaces, namely the nanocolumn arrays and external air and the diffuse reflection effect of tilted side walls onlight. An N-type ohm contact layer penetrates through a sapphire substrate, a buffering and nucleating layer and metal contact bolts of an AlN / AlGaN superlattice layer and is connected to an N-type AlGaN layer, so that the heat dissipation effect can be strengthened. The invention further provides the ultraviolet LED and a manufacturing method of the ultraviolet LED chip. The ultraviolet LED comprises the ultraviolet LED chip, so that the light extraction efficiency and the brightness of the ultraviolet LED can be strengthened and the heat dissipation effect can be strengthened.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an ultraviolet LED chip, a manufacturing method of the ultraviolet LED chip and an ultraviolet LED. Background technique [0002] With the development of ultraviolet LED technology, the improvement of output performance and the reduction of production cost, compared with traditional ultraviolet light sources, ultraviolet LED has the advantages of long theoretical service life, high efficiency, stability and reliability, uniform brightness and no toxic substances. The wide application in the fields of sterilization, light curing and general lighting has also attracted more and more attention from the semiconductor lighting industry in recent years. However, at present, there is a light absorption phenomenon between the internal contact layer material and the epitaxial layer structure in the LED epitaxial wafer, which leads to the problems of poor light efficiency and low ...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/10H01L33/00
CPCH01L33/007H01L33/06H01L33/10
Inventor 何苗杨思攀王润赵韦人
Owner GUANGDONG UNIV OF TECH
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