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Fluorescent powder material for near-infrared LED (Light Emitting Diode) and preparation method thereof

A phosphor, near-infrared technology, applied in luminescent materials, chemical instruments and methods, etc., can solve the problem of less research on near-infrared fluorescent materials, and achieve the effects of simple preparation method, wide excitation range and easy operation

Inactive Publication Date: 2018-06-12
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a long time, people's research on solid-state luminescent materials has mainly focused on visible light and ultraviolet light-emitting fluorescent materials. There are relatively few studies on near-infrared fluorescent materials, and there are no corresponding mature products on the market. Performance and meet the multi-purpose near-infrared fluorescent materials

Method used

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  • Fluorescent powder material for near-infrared LED (Light Emitting Diode) and preparation method thereof
  • Fluorescent powder material for near-infrared LED (Light Emitting Diode) and preparation method thereof
  • Fluorescent powder material for near-infrared LED (Light Emitting Diode) and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A kind of phosphor material of near-infrared LED, the chemical expression of this phosphor is Y 0.95 al 2.79 (BO 3 ) 4 : 0.21Cr, 0.05Yb, its preparation steps are as follows:

[0031] 1. Weigh raw material Y 2 o 3 0.00475mol, Al 2 o 3 0.01395mol,H 3 BO 3 0.056mol, Cr 2 o 3 0.00105mol, Yb 2 o 3 0.00025mol;

[0032] 2. After fully mixing the weighed raw materials, sinter in air at 1250°C for 10 hours to obtain a roasted product;

[0033] 3. After fully grinding the obtained roasted product into powder and passing through a 200-mesh sieve, wash with deionized water for 3 times, and dry at 80°C to obtain the Y powder of the present invention. 0.95 al 2.79 (BO 3 ) 4 : 0.21Cr, 0.05Yb near-infrared phosphor.

[0034] The excitation spectrum and emission spectrum of the fluorescent powder prepared in this embodiment are as attached figure 1 shown.

Embodiment 2

[0036] A kind of phosphor material of near-infrared LED, the chemical expression of this phosphor is Gd 0.95 al 2.79 (BO 3 ) 4 : 0.21Cr, 0.05Yb, its preparation steps are as follows:

[0037] 1. Weigh the raw material Gd 2 o 3 0.00475mol, Al 2 o 3 0.01395mol,H 3 BO 3 0.056mol, Cr 2 o 3 0.00105mol, Yb 2 o 3 0.00025mol;

[0038] 2. The weighed raw material and 10% AlF by weight of the raw material 3 After fully mixing as a flux, sintering at 1200°C in air for 5h, then fully grinding the sintered product, and then firing twice at 1200°C in air for 10h to obtain a roasted product;

[0039] 3. Grind the roasted product into powder and pass through a 200-mesh sieve, wash with deionized water for 3 times, and dry at 100°C to obtain the near-infrared phosphor Gd of the present invention 0.95 al 2.79 (BO 3 ) 4 : 0.21Cr, 0.05Yb.

[0040] The excitation spectrum and emission spectrum of the fluorescent powder prepared in this embodiment are as attached figure 2 ,...

Embodiment 3

[0042] A kind of phosphor material of near-infrared LED, the chemical expression of this phosphor is Lu 0.98 al 2.73 (BO 3 ) 4 : 0.27Cr, 0.02Yb, its preparation steps are as follows:

[0043] 1. Weigh the raw material Lu 2 o 3 0.0049mol, Al 2 o 3 0.01365mol,H 3 BO 3 0.064mol, Cr 2 o 3 0.00135mol, Yb 2 o 3 0.0001mol;

[0044] 2. The weighed raw material and 5% AlF by weight of the raw material 3 After fully mixing as a flux, sinter in air at 1300°C for 10 hours to obtain a calcined product;

[0045] 3. Fully grind the calcined product into powder and pass through a 200-mesh sieve, wash with deionized water for 3 times, and dry at 120°C to obtain the near-infrared fluorescent powder Lu of the present invention. 0.98 al 2.73 (BO 3 ) 4 : 0.27Cr, 0.02Yb.

[0046] The excitation spectrum and emission spectrum of the fluorescent powder prepared in this embodiment are as attached Figure 4 , 5 shown.

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Abstract

The invention discloses a fluorescent powder material for a near-infrared LED (Light Emitting Diode) and a preparation method thereof. A chemical expression of the fluorescent powder material is R(1-y)X(3-x)(BO3)4:xCr, yYb, wherein R is at least one of La, Lu, Gd, Y and Nd, X is at least one of Al, Ga and Sc, x is greater than or equal to 0.005 and is smaller than or equal to 0.5, and y is greaterthan or equal to 0.005 and is smaller than or equal to 0.2. The preparation method of the fluorescent powder material comprises the following steps: (1) weighing raw materials according to chemical compositions and chemical dosage; (2) firing after directly and uniformly mixing the raw materials, or fully and uniformly mixing and firing after adding a reaction fluxing agent, thus obtaining a roasted product; (3) carrying out aftertreatment on the roasted product, thus obtaining the fluorescent powder material. The fluorescent powder material prepared by the invention is stable in chemical property and good in luminescent property; the preparation method is simple and easy in operation, is pollution-free and is low in cost.

Description

technical field [0001] The invention relates to a phosphor material for near-infrared LEDs and a preparation method thereof, belonging to the technical field of solid luminescent materials. Background technique [0002] Semiconductor lighting sources have not only gradually replaced traditional incandescent and fluorescent lamps in the field of general lighting, but also continue to expand into new fields such as intelligent lighting, automotive lighting, plant lighting and infrared LEDs. Infrared LED is one of the important types of LEDs, and its wavelength is about 700~1200nm; the application fields of infrared LED include optical fiber communication, spectrum test light source, security monitoring, biomedicine, food detection, iris or face recognition, etc. The infrared LEDs that are common in the current market mainly use semiconductor chips directly, which have disadvantages such as low single power, poor thermal stability, narrow emission spectrum, and high cost. In p...

Claims

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Application Information

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IPC IPC(8): C09K11/80C09K11/78
CPCC09K11/778
Inventor 邵起越丁浩董岩蒋建清
Owner SOUTHEAST UNIV
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