Infrared fluorescent powder for LED (light-emitting diode), preparation method thereof and infrared light-emitting device

A technology of infrared luminescence and fluorescent powder, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor devices, etc., can solve the problems of low infrared emission efficiency and failure to meet application requirements, and achieve wide excitation range, thermal stability and adjustable luminescence , the effect of wide coverage area

Pending Publication Date: 2022-08-09
JIANGSU BREE OPTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although a kind of LED infrared phosphor La 3 Ga 5 GeO 14 :Cr 3+ , the half-peak width reaches 330nm, but its emission peaks are double peaks, among which, the strong peak wavelength is at 750nm, and the weak peak wavelength is at 920nm. The infrared emission efficiency is low and cannot meet the application requirements.

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  • Infrared fluorescent powder for LED (light-emitting diode), preparation method thereof and infrared light-emitting device
  • Infrared fluorescent powder for LED (light-emitting diode), preparation method thereof and infrared light-emitting device
  • Infrared fluorescent powder for LED (light-emitting diode), preparation method thereof and infrared light-emitting device

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preparation example Construction

[0056] The preparation method of this embodiment is simple, easy to operate, low in cost, and pollution-free, and is suitable for industrialized batch production.

[0057] Another aspect of the present invention provides an infrared light-emitting device comprising an excitation source and an infrared fluorescent material, the infrared fluorescent material using the aforementioned infrared fluorescent powder for LEDs, wherein the emission peak wavelength range of the excitation source is 250nm-780nm.

[0058] Specifically, in some embodiments, the emission peak wavelength range of the above excitation source may also preferably be 250 nm-380 nm, 400 nm-500 nm, or 530 nm-780 nm.

[0059] It should be noted that this embodiment does not specifically limit the excitation source, for example, an LED chip may be used.

[0060] Further, this embodiment also provides a preparation method of the infrared light-emitting device, including the following steps:

[0061] First, fully mixi...

Embodiment 1

[0066] In this example, the preparation method of infrared phosphor for LED, the chemical expression of the phosphor is Ga 3.949 Cr 0.051 GeO 8 , the preparation method comprises the following steps:

[0067] S1. According to the stoichiometric ratio between the elements of the above chemical formula, accurately weigh the raw material Ga 2 O 3 1.9745mol, Cr 2 O 3 0.0255mol, GeO 2 1mol.

[0068] S2, the above-mentioned each raw material and the boric acid of the raw material weight 0.5% taken by weighing are used as fluxing agent, after fully mixing, the crucible is put into the electric furnace, and sintered in air atmosphere, wherein, the heating process is set as follows: the first heating stage : 25°C~800°C temperature range, heating rate 10°C / min; second heating stage: temperature range above 800°C, heating rate 5°C / min. When the temperature reaches 1250 ℃, it is fired for 10 hours, and then cooled to room temperature with the furnace to obtain the fired product. ...

Embodiment 2

[0072] In this example, the preparation method of infrared phosphor for LED, the chemical expression of the phosphor is Ga 3.94 Cr 0.06 GeO 8 , the preparation method comprises the following steps:

[0073] S1. According to the stoichiometric ratio between the elements of the above chemical formula, accurately weigh the raw material Ga 2 O 3 1.97mol, Cr 2 O 3 0.03mol, GeO 2 1mol.

[0074] S2, the above-mentioned each raw material taken and the boric acid of the raw material weight 3% are used as fluxing agent, after fully mixing, the crucible is put into the electric furnace, and sintered in air atmosphere, wherein, the heating process is set as follows: the first heating stage : 25 ℃~800 ℃ temperature range, heating rate 12 ℃ / min; second heating stage: temperature range above 800 ℃, heating rate 4 ℃ / min. When the temperature reaches 1350 ℃, it is fired for 1 hour, and then cooled to room temperature with the furnace to obtain the fired product.

[0075] S3, the obtai...

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Abstract

The invention provides infrared fluorescent powder for an LED (light-emitting diode), a preparation method of the infrared fluorescent powder and an infrared light-emitting device. The infrared fluorescent powder for the LED comprises an inorganic compound with the chemical formula of M4-xNO8: Crx, x is larger than 0.05 and smaller than or equal to 1.0, M is Ga or at least one of four elements of B, Al, In and Sc and Ga, and N is selected from Ge or at least one of two elements of Si and Sn and Ge; and the wavelength range of the emission peak of the infrared fluorescent powder for the LED is 850-1000 nm, and the half-peak width of the emission peak is greater than 220 nm. The infrared fluorescent powder is stable in property, high in luminous intensity, wide in excitation range, capable of being effectively excited by visible light within the range of 250 nm to 780 nm, long and adjustable in emission peak wavelength and wide in emission light coverage area so as to achieve broadband dark red and infrared light within the range of 650 nm to 1300 nm, has the advantages of being high in efficiency, excellent in thermal stability, adjustable in luminescence, wide in half-peak width and the like, and can be widely applied to the field of light emitting devices. The method can be used for constructing a broadband infrared light-emitting device.

Description

technical field [0001] The invention belongs to the technical field of LED infrared light emission, and particularly relates to an infrared fluorescent powder for LED, a preparation method of infrared fluorescent powder for LED, and an infrared light-emitting device. Background technique [0002] Based on the unique optical properties of infrared light, it has a wide range of applications in the fields of food inspection, minimally invasive diagnosis and spectral testing. Especially in recent years, it is proposed to construct a portable spectrometer by combining an infrared light source with electronic devices such as smart phones to realize real-time monitoring of human health and food quality. The rise of new fields such as this has put forward higher requirements and challenges for infrared light sources such as wide emission, miniaturization and high efficiency. At present, the mainstream commercial infrared light sources mainly include tungsten incandescent lamps, inf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/66H01L33/50
CPCC09K11/681H01L33/502
Inventor 何锦华邵起越符义兵梁超
Owner JIANGSU BREE OPTRONICS CO LTD
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