Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Constant current device and manufacturing method thereof

A technology of constant current device and manufacturing method, applied in semiconductor devices, electrical components, transistors, etc., to achieve the effect of large current density, increase flexibility, and avoid the problem of reverse voltage resistance

Active Publication Date: 2021-04-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem of reverse conduction of existing constant current devices, the present invention proposes a constant current device and its manufacturing method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] A constant current device, including two parts, a cell area and a terminal area, the cell area includes a plurality of cells 1(1), 1(2)...1(e) with the same structure and sequentially connected, each The cell includes a P-type doped substrate 2, an N-type inverse doped well region 3, and a diffused P-type well region 4 located in the N-type inversely doped well region 3, and the diffused P-type well region 4 is two and are respectively located at both ends of each cell, the diffused P-type well region 4 is provided with a first P-type heavily doped region 5 and an N-type heavily doped region 7, and the N-type heavily doped region 7 is located in the first P-type On both sides of the heavily doped region 5, an oxide layer 10 is provided on the upper surface of the N-type reverse doped well region 3 and the diffused P-type well region 4, and an N-type The depletion channel region 6, the cell region also includes a metal cathode 9 covering the entire upper surface of the c...

Embodiment 2

[0081] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the terminal region also includes a P-type doped ring region 41 located at the inner edge of the N-type reverse doped well region 3, and the diffused P-type well region 4 and The P-type doped ring regions 41 are connected into one body.

[0082] The number e of the cells can be adjusted according to specific current capability requirements; the thickness of the substrate can be adjusted according to specific current capability and voltage withstand capability requirements.

[0083] The distance between the diffused P-type well regions 4 in the cells, the thickness of the substrate and the number of cells can be adjusted according to the requirements of specific withstand voltage and pinch-off voltage, which greatly increases the flexibility of device design.

[0084] Said cells form a thin-layer channel by implanting phosphorus ions on the surface of the diffused P-type well reg...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a constant current device and its manufacturing method, including two parts: a cell area and a terminal area, the cell area includes a plurality of cells with the same structure and connected in sequence, and each cell includes a P-type doped substrate , N-type inverted doped well region, diffused P-type well region, the terminal region includes the P-type doped epitaxial region outside the N-type inverted doped well region, and the constant current device of the present invention is implanted and lined in the active region of the P-type substrate The bottom doping type is opposite to the semiconductor material, and then the active region is connected up and down through epitaxy and pushing the well, so that the reverse doped well is connected to the positive doped well, so that the active region of the device and the terminal region naturally form a PN junction isolation, thereby The problem of reverse voltage resistance caused by the edge defect of the PN junction of the substrate is avoided. The constant current device of the present invention is a bipolar device. Compared with the unipolar device, the constant current device of the present invention has a larger current density, which can save The chip area; and the dual channel design is adopted, so that the device has a strong constant current capability, and the current value at constant current is more stable.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a constant current device and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, which uses a two-terminal junction field effect transistor as a constant current source instead of an ordinary constant current composed of multiple components such as transistors, voltage regulator tubes, and resistors. The source can maintain a constant current value within a certain working range. When it works in the forward direction, it is a constant curr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/73H01L29/06H01L27/082
CPCH01L27/082H01L29/0684H01L29/73
Inventor 乔明肖家木赖春兰方冬李路张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com