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Constant current device and manufacturing method thereof

A technology of constant current devices and manufacturing methods, applied to semiconductor devices, electrical components, transistors, etc., to achieve the effects of saving chip area, avoiding the problem of reverse non-voltage resistance, and stabilizing the current value

Active Publication Date: 2018-06-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem of reverse conduction of existing constant current devices, the present invention proposes a constant current device and its manufacturing method

Method used

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  • Constant current device and manufacturing method thereof

Examples

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Embodiment 1

[0061] A constant current device, including two parts, a cell area and a terminal area, the cell area includes a plurality of cells 1(1), 1(2)...1(e) with the same structure and sequentially connected, each The cell includes a P-type doped substrate 2, an N-type inverse doped well region 3, and a diffused P-type well region 4 located in the N-type inversely doped well region 3, and the diffused P-type well region 4 is two and are respectively located at both ends of each cell, the diffused P-type well region 4 is provided with a first P-type heavily doped region 5 and an N-type heavily doped region 7, and the N-type heavily doped region 7 is located in the first P-type On both sides of the heavily doped region 5, an oxide layer 10 is provided on the upper surface of the N-type reverse doped well region 3 and the diffused P-type well region 4, and an N-type The depletion channel region 6, the cell region also includes a metal cathode 9 covering the entire upper surface of the c...

Embodiment 2

[0081] like Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the terminal region also includes a P-type doped ring region 41 located at the inner edge of the N-type reverse doped well region 3, and the diffused P-type well region 4 and The P-type doped ring regions 41 are connected into one body.

[0082] The number e of the cells can be adjusted according to specific current capability requirements; the thickness of the substrate can be adjusted according to specific current capability and voltage withstand capability requirements.

[0083] The distance between the diffused P-type well regions 4 in the cells, the thickness of the substrate and the number of cells can be adjusted according to the requirements of specific withstand voltage and pinch-off voltage, which greatly increases the flexibility of device design.

[0084] Said cells form a thin-layer channel by implanting phosphorus ions on the surface of the diffused P-type well region...

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Abstract

The invention provides a constant current device and a manufacturing method thereof. The constant current device comprises two parts of a cell area and a terminal area, wherein the cell area comprisesmultiple cells which are of the same structure and are connected in sequence, each cell comprises a P-type doping substrate, an N-type reverse doping well region and a diffusion P-type well region, the terminal area comprises P-type doping epitaxial regions at the outer sides of the N-type reverse doping well regions. A semiconductor material of which the type is opposite to the substrate dopingtype is injected into a P-type substrate active area of the constant current device, through epitaxy and well pushing, an active region is vertically through, so that a reverse doping well is connected with a forward doping well, in this way, the active region of the device and the terminal area naturally form PN junction isolation, and the problem that the reverse side of the constant current device does not withstand voltage due to defects at the edges of the substrate PN junction is thus solved. The constant current device is a bipolar device, compared with a monopolar device, the constantcurrent device has larger current density, and the chip area can be saved; dual-drench design is adopted, so that the device has a better constant current capacity, and the current value during constant current is more stable.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a constant current device and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, which uses a two-terminal junction field effect transistor as a constant current source instead of an ordinary constant current composed of multiple components such as transistors, voltage regulator tubes, and resistors. The source can maintain a constant current value within a certain working range. When it works in the forward direction, it is a constant curr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/73H01L29/06H01L27/082
CPCH01L27/082H01L29/0684H01L29/73
Inventor 乔明肖家木赖春兰方冬李路张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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