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Constant current device and manufacturing method thereof

A technology of constant current device and manufacturing method, which is applied to semiconductor devices, electrical components, transistors, etc., to achieve the effect of saving chip area, avoiding the problem of reverse voltage resistance, and stable current value

Inactive Publication Date: 2018-06-19
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem of reverse conduction of existing constant current devices, the present invention proposes a constant current device and its manufacturing method

Method used

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  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0059] Such as Figure 4 As shown, a constant current device includes two parts: a cell area and a terminal area. The cell area includes a plurality of cells 1(1), 1(2)...1(e) with the same structure and sequentially connected , each cell includes a P-type doped substrate 2, an N-type epitaxial layer 3, a diffused P-type well region 4 located in the N-type epitaxial layer 3, and the diffused P-type well region 4 is two and located respectively At both ends of each cell, the first P-type heavily doped region 5 and the N-type heavily doped region 7 located in the diffused P-type well region 4, the first P-type heavily doped region 5 is located in the N-type heavily doped region On both sides of the impurity region 7, an oxide layer 10 is provided on the upper surface of the N-type epitaxial layer 3 and the diffused P-type well region 4, and an N-type depletion channel is arranged between the upper surface of the diffused P-type well region 4 and the oxide layer 10 Region 6, the...

Embodiment 2

[0064] Such as Figure 5 As shown, the difference between this embodiment and Embodiment 1 is that: the terminal region includes a P-type doped region 21 formed around the groove by thermal process after the groove implantation.

[0065] The manufacturing method of the constant current device: the constant current device introduces a groove in the terminal region, and performs P-type impurity implantation around the groove to form a P-type doped region 21, so that the cell region and the device edge defect Phase isolation is achieved by PN junction isolation to achieve forward constant current and reverse high voltage resistance.

[0066] The manufacturing method of the constant current device specifically includes the following steps:

[0067] Step 1: using a P-type silicon wafer as a P-type doped substrate 2;

[0068] Step 2: performing N-type doped epitaxy on the P-type doped substrate 2;

[0069] Step 3: photoetching the ion implantation window of the P-type doped ring ...

Embodiment 3

[0101] As shown in FIG. 9(1)-(9), the manufacturing method of the constant current device provided in this embodiment, compared with FIG. 8, in FIG. 9 omits the groove implantation and directly grows the oxide layer.

[0102] The initial silicon wafer is epitaxy with one side as the front side, and then the terminal area is processed, including ring implantation, deep groove etching, groove side wall implantation, thick field oxygen in the growth groove and the upper surface of the terminal area, etc.; then, the junction is pushed to form a diffusion P-type well region; after pre-oxidation, perform channel adjustment implantation to form a surface depletion channel, then perform N-type heavily doped implantation, P-type heavily doped implantation, etch the redundant oxide layer; then deposit the oxide layer on the front side, Metal layer and passivation; then perform P-type heavily doped back implant; finally deposit metal layer and passivation on the back.

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Abstract

The present invention provides a constant current device and a manufacturing method thereof. The constant current device comprises a cell area and a terminal area, the cell area comprises a pluralityof cells having the same structures and connected orderly, each cell comprises a P-type doped substrate, an N-type epitaxial layer and a diffusion P-type well region, and the terminal area comprises the oxidation layers in the grooves formed by injecting in the grooves and then pushing the junctions during a thermal process and the thick field oxygen layers located on the upper surfaces of the N-type epitaxial layers. According to the present invention, the cell area of the device and the edge defects are isolated in a manner of injecting in the grooves to form the PN junctions, thereby avoiding the problem of not being able to withstand voltages reversely due to the edge defects of the PN junctions of the substrate. The constant current device of the present invention isolates the terminals in a manner of injecting in the grooves to form the PN junctions, so that the formed isolation is high in reliability, the PN junctions withstand the voltages when the reverse voltages are applied,and the quality requirements of the oxidation layers at the bottoms and on the side walls of the grooves are not high. The groove injection is not needed on the condition of high groove quality, andjust the oxidation layers in the grooves withstand the voltages.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a constant current device and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, which uses a two-terminal junction field effect transistor as a constant current source instead of an ordinary constant current composed of multiple components such as transistors, voltage regulator tubes, and resistors. The source can maintain a constant current value within a certain working range. When it works in the forward direction, it is a constant curr...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/73H01L27/082
CPCH01L27/082H01L29/0684H01L29/73
Inventor 乔明肖家木赖春兰李路方冬张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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