Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Constant current device and manufacturing method thereof

A constant current device, N-type technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of saving chip area, low cost, and avoiding reverse voltage failure

Inactive Publication Date: 2018-06-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem of reverse conduction of existing constant current devices, the present invention proposes a constant current device and its manufacturing method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] A constant current device, including a plurality of cells with the same structure and sequentially connected, each cell includes a P-type heavily doped substrate 2, an N-type doped epitaxial layer 3, and is located in the N-type doped epitaxial layer 3 The diffused P-type well region 4, the diffused P-type well region 4 is two and respectively located at both ends of each cell, the first P-type heavily doped region 5 and N located inside the diffused P-type well region 4 Type heavily doped region 7, the first P type heavily doped region 5 is located on both sides of the N type heavily doped region 7, an oxide layer 10 is provided on the upper surface of the N type doped epitaxial layer 3 and the diffused P type well region 4, The cell also includes a metal cathode 9 covering the entire upper surface of the cell, a metal anode 8 located on the lower surface of the P-type heavily doped substrate 2, the first P-type heavily doped region 5, the N-type heavily doped region 7 ...

Embodiment 2

[0099] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the constant current device also includes a P-type doped ring region 41 located at the inner edge of the cell region, and a diffused P-type well region 4 and a P-type well region at the outermost edge of the entire device. The doped ring region 41 is connected as a whole.

[0100] In this embodiment, there is no dielectric 13 inside the deep dielectric trench 12 for filling the gap of the oxide layer in the trench.

[0101] Such as Figure 7(1)-Figure 7(10) As shown, FIG. 7 is a schematic flow chart of the manufacturing method of the constant current device provided in this embodiment. Among them, Figure 7(1) is the initial silicon wafer; Figure 7(2) is the silicon wafer after N-type doped epitaxy on the front; Figure 7(3) is the deep groove etched in the epitaxial wafer terminal area; Figure 7(4) In order to perform P-type impurity implantation on the bottom of the groove; Fi...

Embodiment 3

[0103] Such as Figure 9As shown, the difference between this embodiment and Embodiment 3 is that: the dielectric deep groove 12 is provided with a dielectric 13 for filling the gap of the oxide layer in the groove.

[0104] As a preferred manner, each doping type in the constant current device is correspondingly changed to opposite doping, that is, when P-type doping changes to N-type doping, N-type doping changes to P-type doping.

[0105] As a preferred manner, the semiconductor material used in the constant current device is silicon or silicon carbide.

[0106] Further, the P-type doped ring region 41 in the constant current device can be one or more according to the difference of the withstand voltage of the device.

[0107] Further, the bottom of the groove in the constant current device does not necessarily need to be in the P-type heavily doped substrate 2 , it only needs to meet the requirement that the PN junction at the bottom of the groove is connected to the P-ty...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a constant current device and a manufacturing method thereof. The constant current device comprises a plurality of cells which have the same structures and are connectedorderly, each cell comprises a P-type doped substrate, an N-type epitaxial layer and a diffusion P-type well region, and also comprises a medium deep groove in an N-type doped epitaxial layer, the P-type doped regions and an N-type depletion channel region. The medium deep grooves and the P-type doped regions located at the bottoms and on the side walls of the medium deep grooves isolate the sidewalls of the device. The constant current device of the present invention isolates the device cell regions and the edge defects in a manner of introducing the groove terminals, thereby avoiding the problem of not being able to withstand voltages reversely due to the edge defects of the PN junctions of the substrate. The groove terminals and the PN junction terminals are combined in a manner of vertically injecting in the grooves to form the PN junctions, and the terminals are isolated on the condition of thicker epitaxial thickness. The N-type doping is injected in an active region of the substrate and then is extended externally, the wells are pushed in the N-type doped epitaxial layers to form the diffusion P-type well regions, and a conductive channel is formed between the two diffusion well regions, so that the manufacturing technology is simple, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a constant current device and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, which uses a two-terminal junction field effect transistor as a constant current source instead of an ordinary constant current composed of multiple components such as transistors, voltage regulator tubes, and resistors. The source can maintain a constant current value within a certain working range. When it works in the forward direction, it is a constant curr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L27/082H01L21/331
CPCH01L27/082H01L29/0615H01L29/66325H01L29/7393
Inventor 乔明赖春兰肖家木李路方冬张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com