4H-SiC crystal growing method

Abstract

The invention provides a 4H-SiC crystal growing method, comprising the following steps: preparing a mixture of polycrystalline silicon carbide and metal; allowing 4H-SiC crystals to grow with the mixture of polycrystalline silicon carbide and metal as a raw material; and heating the mixture of polycrystalline silicon carbide and metal until the mixture is molten. The method can realize uniform mixing of silicon and carbon, guarantee the content of silicon in formed 4H-SiC crystals and improve the quality of the 4H-SiC crystals.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a 4H-SiC crystal growth method. Background technique [0002] As a member of the third-generation wide bandgap semiconductor materials, compared with common semiconductor materials such as silicon (Si) and calcium arsenide (GaAs), silicon carbide (SiC) materials have a large band gap and a high carrier saturation migration velocity. , high thermal conductivity, high critical breakdown field strength and many other excellent properties. Based on these excellent characteristics, silicon carbide materials are more ideal materials for the preparation of high-temperature electronic devices and high-frequency high-power devices. Especially when applied under extreme conditions and harsh conditions, the characteristics of SiC devices far exceed Si devices and GaAs devices. In the field of optoelectronics, compared with the traditional substrate materials Si and sapphire, the...

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Problems solved by technology

[0005] In the TSSG method, silicon and carbon sources are heated in a carbon-graphite crucible, and carbon is continuously precipitated from the surface of the carbon-graphite crucible. However, the content of silicon is limited, resulting in the lack of silicon in the final crystal, which affects the 4H-SiC crystal. the quality of

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