A method for manufacturing semiconductor packaging devices by laser

A technology for packaging devices and semiconductors, used in semiconductor/solid-state device manufacturing, manufacturing tools, laser welding equipment, etc., can solve problems such as failure to achieve device design goals, high process complexity, and poor process accuracy, saving space. , The effect of low production complexity and improved efficiency

Active Publication Date: 2019-10-11
丽智电子(南通)有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the manufacturing methods of packaging devices in the electronics industry are mostly traditional mechanical processing. For device processing of high-end semiconductor components such as diodes, there may be poor process accuracy, high process complexity, or even failure to achieve device design purposes.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for manufacturing semiconductor packaging devices by laser
  • A method for manufacturing semiconductor packaging devices by laser
  • A method for manufacturing semiconductor packaging devices by laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0030] Such as figure 1 Shown, a kind of laser manufactures the method for semiconductor packaging device, comprises the following steps:

[0031] Step 1, such as figure 1 and 2 As shown, grooves 3 are cut on the top surface of the ceramic substrate 2. The cross section of the grooves 3 is V-shaped. The grooves 3 include several horizontal and several vertical ones. Several component units 1 are formed by dividing the grooves 3. Define The module unit 1A side is opposite to the B side.

[0032] Step 2, such as image 3 As shown, the top surface of the assembly unit 1 is coated with conductive paste, and extends to the side of the assembly unit 1A to form the lower conductive path 4 .

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for manufacturing a semiconductor encapsulation device by laser. In combination with a laser technology, as a semiconductor is encapsulated by a ceramic material serving as a substrate, the precision is high, and the manufacturing complexity is relatively low; meanwhile, an end electrode is provided for the encapsulation device, and can be directly assembled to anelectrical appliance module; and therefore, the space is saved, and the assembling efficiency of the electrical appliance module is improved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor packaging device by laser, belonging to the field of semiconductor packaging. Background technique [0002] With the continuous development of science and technology, the speed of updating and iterating electronic products is also accelerating. Semiconductor component packaging technology is integrated with advanced technologies in other fields, and is developing towards miniaturization and high-efficiency production. At present, the manufacturing methods of packaged devices in the electronics industry are mostly traditional mechanical processing. For the device processing of high-end semiconductor components such as diodes, the process accuracy is poor, the process complexity is high, and even the device design purpose cannot be achieved. Contents of the invention [0003] In order to solve the above technical problems, the present invention provides a method for laser manufacturing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56H01L21/48B23K26/402
CPCB23K26/402H01L21/4857H01L21/56
Inventor 王焕菊褚宏深王国庆宋旭官黄正信
Owner 丽智电子(南通)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap