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Laser grooving and scribing technology of improving cadmium telluride (CdTe ) thin film solar cell test accuracy

A thin-film solar cell and cadmium telluride technology, applied in laser welding equipment, circuits, photovoltaic power generation, etc.

Active Publication Date: 2018-06-19
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Laser grooving and scribing technology of improving cadmium telluride (CdTe ) thin film solar cell test accuracy
  • Laser grooving and scribing technology of improving cadmium telluride (CdTe ) thin film solar cell test accuracy
  • Laser grooving and scribing technology of improving cadmium telluride (CdTe ) thin film solar cell test accuracy

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Embodiment Construction

[0012] For implementation see figure 1 figure 2 , figure 1 The 121 and 122 steps are the traditional small-area CdTe thin film solar cell preparation process, that is, after depositing the metal back electrode with a mask, first carefully cover the back electrode with black glue, and then use bromomethanol after the black glue is cured. The solution washes away other functional layers other than the electrodes, and finally removes the black glue. 123 means on the basis of 121 and 122, use laser scribing to define a smaller and more accurate battery area than the mask method. Scribe 1 to 2mm inwards from the edge of the originally formed gold electrode. Under this condition, the fracture of the unit cell obtained by scribing is neat and has no interference from the residual absorbing layer. In addition, if figure 2 As shown, the entire scribing system and scribing process are precisely controlled by a computer, and parameters such as scribing mode, graphics, and laser powe...

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Abstract

The present invention relates to a laser grooving and scribing technology of improving the cadmium telluride thin film solar cell test accuracy, discloses a method of accurately defining the area of acadmium telluride thin film solar cell, and belongs to the structure design technology field of a compound semiconductor thin film solar cell. According to the present invention, by using the pulse Nd:YAG laser to carry out the laser grooving and scribing on the CdTe thin film solar cell having a complete device structure, the situation that a metal electrode edge residual absorption layer material CdTe causes the transverse collection of the incident light, so that a current is artificially high can be eliminated, at the same time, the influence of the edge residual cadmium telluride on thedevice series resistance and parallel resistance is eliminated, thereby providing a method that is economically feasible, and accurately defines the area of the CdTe thin film solar cell to thereby obtain a more credible cell efficiency curve.

Description

technical field [0001] The invention belongs to the technical field of structural design of compound semiconductor thin film solar cells. Background technique [0002] CdTe is a direct band gap semiconductor with a band gap of 1.45eV, which is very close to the optimal band gap required by solar cells. CdTe has a strong absorption of visible light with an absorption coefficient as high as ~10 5 cm -1 , for sunlight whose light energy is higher than the band gap of CdTe, CdTe with a thickness of 1 μm can effectively absorb 99% of the light, which is very suitable for use as a solar cell absorber material. Since Cusano reported the first case of n-CdTe / p-Cu with a photoelectric conversion efficiency of 7% in 1963 2-x Since Te heterojunction thin-film solar cells, CdTe materials have attracted the attention of scholars and p-CdTe / n-CdS heterojunction solar cells have been developed and have been used until now. At present, the highest conversion efficiency of small-area CdT...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0445H01L31/0296H01L31/18B23K26/362B23K26/402B23K26/60
CPCB23K26/361B23K26/402B23K26/60H01L31/0296H01L31/0445H01L31/1828Y02E10/543Y02P70/50
Inventor 郝霞王文武赖华贵张静全武莉莉
Owner SICHUAN UNIV