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Superjunction IGBT with enhanced carrier storage effect

A technology of gate structure and conductivity type, applied in the field of power semiconductor devices, can solve the problems of increasing on-voltage drop, increasing on-state power consumption, weak storage effect, etc.

Active Publication Date: 2018-06-22
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the conduction state, the minority carrier holes injected from the p-type collector region to the n-column region are easily collected by the p-column region, enter the p-type base region, and flow into the emitter, so the minority carrier holes are in the withstand voltage region The memory effect in the middle (especially the top of the withstand voltage region) is relatively weak, which will increase the conduction voltage drop (or increase the conduction state power consumption)

Method used

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  • Superjunction IGBT with enhanced carrier storage effect
  • Superjunction IGBT with enhanced carrier storage effect
  • Superjunction IGBT with enhanced carrier storage effect

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Embodiment Construction

[0058] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0059] figure 1 (a) shows the schematic diagram of the traditional super-junction IGBT structure, figure 1 (b) shows the schematic diagram of the traditional semi-superjunction IGBT structure. Compared with the super-junction IGBT, the semi-super-junction IGBT has one more bearing part between the n-pillar area (n-pillar area 31) and the p-pillar area (p-pillar area 41) and the buffer zone (n area 20). An auxiliary layer (n-assist region 21 ) for applying a voltage, wherein the doping concentration of the auxiliary layer may be lower than or equal to the doping concentration of the n-pillar region (n-pillar region 31 ). When a gate voltage exceeding the threshold voltage is applied to the gate (G), the surface of the base region (p-base region 50) under the gate dielectric (60) is inversion, forming an electron channel, and this electron channel will emit the regio...

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Abstract

The invention provides a sperjunction IGBT (Insulated Gate Bipolar Transistor) device. A semiconductor region of the second conductivity type in a voltage resistance layer is connected with an emitterthrough a bipolar transistor of a base open circuit; the bipolar transistor of the base open circuit and the semiconductor region of the second conductivity type in the voltage resistance layer are isolated from a base region through a slot gate structure; the bipolar transistor of the base open circuit and the slot gate structure form an MISFET (metal-Insulator-Semiconductor Field Effect Transistor) with a floating substrate; and an electrode of the slot gate structure can be connected with a gate or the emitter. The bipolar transistor of the base open circuit can help to enhance the carrierstorage effect in a voltage resistance region during forward conduction, thereby reducing a conduction voltage drop.

Description

technical field [0001] The invention belongs to semiconductor devices, especially power semiconductor devices. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a widely used power semiconductor device. The super junction is a voltage-resistant structure in which n-column regions / p-column regions are alternately arranged, which can enable the n-column region and p-column region to obtain a higher breakdown voltage under the condition of higher doping concentration. Compared with ordinary IGBTs, when super junctions are applied to IGBTs (i.e. super junction IGBTs), the pn junction formed by the n-column region / p-column region can be depleted faster during the turn-off process, so super-junction IGBTs can be obtained Faster shutdown (or lower shutdown power). However, in the conduction state, the minority carrier holes injected from the p-type collector region to the n-column region are easily collected by the p-column region, enter the p-type base re...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/08H01L29/10H01L29/423H01L29/739
CPCH01L29/0634H01L29/0821H01L29/1004H01L29/42312H01L29/7397H01L29/7398
Inventor 黄铭敏
Owner SICHUAN UNIV
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